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On the chaotic nature of random telegraph noise in unipolar RRAM memristor devices

Chaos, Solitons and Fractals, 2022
Stavros G Stavrinides   +2 more
exaly   +2 more sources

Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

Applied Physics Letters, 2023
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors ...
S. Bonaldo, D. Fleetwood
semanticscholar   +1 more source

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Advanced Functional Materials, 2023
Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high ...
S. Pazos   +11 more
semanticscholar   +1 more source

A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs

IEEE International Reliability Physics Symposium, 2023
As well known, the implementation of $\text{high}-\kappa$ dielectrics (e.g., $\text{HfO}_{2})$ in nanoscale devices is unavoidable to cope with the device scaling required by the market.
Sara Vecchi, P. Pavan, F. Puglisi
semanticscholar   +1 more source

Quantum interferometric power and Bures distance entanglement versus normalized steered coherence under random telegraph noise

Modern Physics Letters A, 2023
This study examines the impact of random telegraph noise on non-separability, non-classicality, and steered coherence in a bipartite system initially prepared in a Gisin state and embedded in both Markovian and non-Markovian environments. To quantify non-
S. Elghaayda, M. Abd-Rabbou, M. Mansour
semanticscholar   +1 more source

Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation

International Conference on Noise and Fluctuations, 2023
Random Telegraph Noise (RTN) amplitudes are analyzed for different drain-source voltage biases in bulk MOSFETs issued from a CMOS 40 nm technology. The study highlights the modulation of RTN amplitudes due to the responsible trap’s position along the ...
O. Gauthier   +3 more
semanticscholar   +1 more source

Long-time protection of thermal correlations in a hybrid-spin system under random telegraph noise.

Physical Review E, 2022
The engineering features of transmitting mediums and their impact on different characteristics of a quantum system play a significant role in the efficient performance of nonlocal protocols.
Fadwa Benabdallah   +3 more
semanticscholar   +1 more source

Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash

IEEE Electron Device Letters, 2022
As an important constraint on the threshold voltage (Vt) distribution, the random telegraph noise (RTN) has attracted much attention due to the widely used multi-bit-per-cell technology in 3D NAND flash.
Xinlei Jia   +11 more
semanticscholar   +1 more source

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