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On the amplitude of random telegraph noise
Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
K. P. Cheung +3 more
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Random Telegraph Noise in Laser-Assisted Collisions
Europhysics Letters (EPL), 1987We present a treatment of potential scattering of a charged particle in a laser field undergoing jumplike fluctuations in amplitude, phase or frequency. Our method allows the inclusion of these three types of noise in a unified way for the case of random telegraph and, more generally, of pre-Gaussian statistics.
Francken, Philippe, Joachain, Charles
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Random telegraph noise in a nickel nanoconstriction
Journal of Applied Physics, 2003Nickel nanoconstrictions about 20 nm wide produced by electron beam lithography in a 60 nm nickel film exhibit resistivities in the kΩ range with a nonlinear and asymmetric I–V characteristic. Noise spectra of the contacts sometimes deviate from 1/f behavior due to random telegraph fluctuations at room temperature with a frequency in the 10 Hz range ...
O. Céspedes +4 more
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RANDOM TELEGRAPH NOISE IN MICROSTRUCTURES
Noise in Physical Systems and 1/F Fluctuations, 1998The theory of random current switchings in conductors with S -type current-voltage characteristic is presented. In the range of bistability, the mean time spent by the system in the low-current state before a transition to the high-current state occurs, {bar {tau}}{sub l} , decreases with voltage, and that for the high-current state, {bar {tau}}{sub h}
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Random telegraph noise of deep-submicrometer MOSFETs
IEEE Electron Device Letters, 1990The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area ( >
K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng
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Amplitudes of random telegraph noise in HTSC thin films
Physica B: Condensed Matter, 1994Abstract Amplitudes of Random Telegraph Voltage Noise in YBaCuO and BiSrCaCuO thin films of different microstructures have been investigated. Telegraph voltage noise originates from thermally activated flux jumps converted into voltage signals by means of intrinsic Josephson junction cluster acting as a dc SQUID.
BONALDI M +5 more
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Random Telegraph Noise in Flash Memories
2020We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description.
A. Sottocornola Spinelli +2 more
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Macroscopic Random Telegraph Noise
Fluctuation and Noise Letters, 2019It is proposed that macroscopic telegraph noise in superconductors is due to dynamic coexistence of ordered and disordered vortex phases (DP and OP) created by edge contamination mechanism. A novel, robust, with bias insensitive rates, macroscopic telegraph noise in low Ca-doped manganites is ascribed to the dynamic current redistribution assisted by ...
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Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs
2018 48th European Solid-State Device Research Conference (ESSDERC), 2018We present a systematic investigation of random dopant fluctuations and random telegraph noise instabilities in Nanowire and Macaroni MOSFETs via 3D atomistic Monte Carlo simulations. We discuss their dependence on geometry and doping and show that different trends appear with respect to planar devices. Some unexpected results are explained in terms of
A. Sottocornola Spinelli +2 more
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Statistical analysis of random telegraph noise in digital circuits
2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC), 2014Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm technology node. Existing RTN simulation approaches mainly focus on single trap induced RTN and transient response of RTN, which are usually time-consuming for circuit-level simulation.
Xiaoming Chen 0003 +3 more
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