Results 251 to 260 of about 125,218 (322)
Statistical Model for Random Telegraph Noise in Flash Memories
IEEE Transactions on Electron Devices, 2008 This paper presents a new physics-based statistical model for random telegraph noise in Flash memories. From the probabilistic superposition of elementary Markov processes describing the trapping/detrapping events taking place in the cell tunnel oxide, the model can explain the main features of the random telegraph noise threshold-voltage instability ...
Christian Monzio Compagnoni +2 more
exaly +5 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Random Telegraph Noise in Analog CMOS Circuits
IEEE Transactions on Circuits and Systems I: Regular Papers, 2023Flicker noise, or 1/f noise, is known to increase as devices scale down. However, as the scaling of MOS transistors advances, the effect of individual oxide defects, which originates flicker noise, becomes apparent through distinguishable discrete ...
M. B. da Silva +4 more
semanticscholar +2 more sources
Advanced Functional Materials, 2021
Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption.
Tommaso Zanotti +2 more
exaly +2 more sources
Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption.
Tommaso Zanotti +2 more
exaly +2 more sources
Random Telegraph Noise in Laser-Assisted Collisions
Europhysics Letters (EPL), 1987 We present a treatment of potential scattering of a charged particle in a laser field undergoing jumplike fluctuations in amplitude, phase or frequency. Our method allows the inclusion of these three types of noise in a unified way for the case of random telegraph and, more generally, of pre-Gaussian statistics.
Francken, Philippe, Joachain, Charles
openaire +3 more sources
Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions.
Physical Review Letters, 2021We study the timescale of random telegraph noise (RTN) of nanomagnets in stochastic magnetic tunnel junctions (MTJs). From analytical and numerical calculations based on the Landau-Lifshitz-Gilbert and the Fokker-Planck equations, we reveal mechanisms ...
K. Hayakawa +7 more
semanticscholar +3 more sources
Shot-Noise-Induced Random Telegraph Noise in Shuttle Current [PDF]
Physical Review Letters, 2002 Random telegraph noise in the electric current produced by shot noise is predicted for an array of movable colloid particles by Monte Carlo and molecular dynamics calculations. The electron transport is attributed to the shuttle mechanism where moving colloid particles carry charges. The colloid-particle motion induced by the source-drain voltage shows
Nishiguchi, Norihiko
openaire +4 more sources
Random Telegraph Noise in Flash Memories
, 2020 We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description.
A. Sottocornola Spinelli +2 more
openaire +3 more sources
Random telegraph noise of deep-submicrometer MOSFETs
IEEE Electron Device Letters, 1990The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area ( >
P K Ko, Y C Cheng
exaly +2 more sources
Observation of random-telegraph noise in resonant-tunneling diodes
Applied Physics Letters, 1993 We report the observation of random-telegraph noise in GaAs/Al0.4Ga0.6As resonant tunneling diodes. Measurements made on our devices from 57 to 70 K revealed discrete switching events with step heights ranging from 6 to 20 μV. Our studies indicated that the 20-μV switching sequences correspond to two-state thermally activated processes involving a ...
Ng, Sze Him +3 more
openaire +3 more sources
Random telegraph noise in carbon nanotubes and peapods
Current Applied Physics, 2006 Abstract The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs) and C60-filled SWNTs (the so-called peapods). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature.
Jhang, S. +7 more
openaire +3 more sources