Results 251 to 260 of about 27,419 (285)

Random Telegraph Noise in Carbon Nanotube Peapod Transistors

Fullerenes, Nanotubes and Carbon Nanostructures, 2005
Abstract We investigated the switching of resistance between two discrete values, known as random telegraph noise (RTN), observed in carbon nanotube peapod transistors [single‐walled carbon nanotubes (SWNTs), C60‐peapods, and Cs‐encapsulated SWNTs (so‐called Cs‐peapods)]. By analyzing the features of the RTN, we suggest that this noise for SWNTs is due
Jhang, S., Lee, S., Lee, D., Park, Y., Jeong, G., Hirata, T., Hatakeyama, R., Dettlaff, U., Roth, S., Kabir, M., Campbell, E.   +10 more
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Shot-Noise-Induced Random Telegraph Noise in Shuttle Current

Physical Review Letters, 2002
Random telegraph noise in the electric current produced by shot noise is predicted for an array of movable colloid particles by Monte Carlo and molecular dynamics calculations. The electron transport is attributed to the shuttle mechanism where moving colloid particles carry charges. The colloid-particle motion induced by the source-drain voltage shows
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Defect-Based Compact Modeling of Random Telegraph Noise

2020
This chapter handles compact modeling of RTN and BTI with the main focus on the statistical component of reliability. A comprehensive overview of the State-of-the-Art(SotA) BTI distribution models will be given. Of these, the Exponential-Poisson distribution, describing BTI from the defect-centric point of view, is considered as the SotA.
Weckx, Pieter, Kaczer, Ben, Simicic, Marko, Parvais, Bertrand, Linten, Dimitri   +4 more
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Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory

2015 45th European Solid State Device Research Conference (ESSDERC), 2015
In this paper we explore the features of complex anomalous Random Telegraph Noise (aRTN) in TiN/Ti/HfO 2 /TiN Resistive Random Access Memory (RRAM) devices. Careful systematic experiment, dedicated characterization techniques, and physics-based simulations are exploited to gain insights into the physics of this phenomenon. The RTN parameters (amplitude
PUGLISI, Francesco Maria, LARCHER, Luca, PADOVANI, ANDREA, PAVAN, Paolo   +3 more
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Spectrum of anomalous random telegraph noise

Journal of Applied Physics, 1993
The alternate capture and emission of electrons at an individual defect site generates discrete switching in resistance, referred to as a random telegraph signal (RTS). Recent experiments indicate that some defects might have two mutually exclusive emission modes with distinct emission rates, which result in the anomalous RTS: a rapid-switching RTS ...
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Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions

Physical Review Letters, 2021
We study the timescale of random telegraph noise (RTN) of nanomagnets in stochastic magnetic tunnel junctions (MTJs). From analytical and numerical calculations based on the Landau-Lifshitz-Gilbert and the Fokker-Planck equations, we reveal mechanisms governing the relaxation time of perpendicular easy-axis MTJs (p-MTJs) and in-plane easy-axis MTJs (i ...
K. Hayakawa, S. Kanai, T. Funatsu, J. Igarashi, B. Jinnai, W. A. Borders, H. Ohno, S. Fukami   +7 more
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Random telegraph noise analysis in time domain

Review of Scientific Instruments, 2000
A new procedure for analysis of random telegraph signals in time domain has been developed and applied to the analysis of voltage fluctuations in the current induced dissipative state in superconducting thin films. The procedure, based entirely on the difference in the statistical properties of discrete Marcovian telegraph fluctuations and Gaussian ...
Y. Yuzhelevski, M. Yuzhelevski, G. Jung
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Random Telegraph Noise Under Switching Operation

2020
This chapter deals with random telegraph noise (RTN) under switching operation. We measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk.
Kazutoshi Kobayashi, Mahfuzul Islam, Takashi Matsumoto, Ryo Kishida   +3 more
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Random telegraphic noise in double barrier systems

Applied Physics Letters, 1993
A random telegraphic noise (RTN) in a resonant tunneling device (RTD) has been found through a self-consistent particle Monte Carlo (MC) simulation with model quantum dynamics. The onset of RTN coincides with the onset of tunneling conduction, and with the onset of the low-current valley region of the current-voltage (I-V) characteristic.
R. E. Salvino, F. A. Buot
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Random telegraph noise in carbon nanotubes and peapods

Current Applied Physics, 2006
Abstract The switching of resistance between two discrete values, known as random telegraph noise (RTN), was observed in individual single-walled carbon nanotubes (SWNTs) and C60-filled SWNTs (the so-called peapods). The RTN has been studied as a function of bias-voltage and gate-voltage as well as temperature.
Jhang, S., Lee, S., Lee, D., Yu, H., Dettlaff, U., Campbell, E., Roth, S., Park, Y.   +7 more
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