Results 1 to 10 of about 277 (105)

Random telegraph signal (RTS) in the Euclid IR H2RGs [PDF]

open access: yesHigh Energy, Optical, and Infrared Detectors for Astronomy VIII, 2018
Euclid is an ESA mission to map the geometry of the dark Universe with a planned launch date in 2021. Euclid is optimised for two primary cosmological probes, weak gravitational lensing and baryonic acoustic oscillations. They are implemented through two science instruments on-board Euclid, a visible imager (VIS) and a near-infrared photometer ...
Kohley, Ralf   +12 more
openaire   +3 more sources

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

open access: yesScientific Reports, 2021
This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation.
F. Di Capua   +5 more
doaj   +2 more sources

Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

open access: yesResults in Physics, 2020
The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu   +9 more
doaj   +3 more sources

Characterization of dark current signal measurements of the ACCDs used on board the Aeolus satellite [PDF]

open access: yesAtmospheric Measurement Techniques, 2021
Even just shortly after the successful launch of the European Space Agency satellite Aeolus in August 2018, it turned out that dark current signal anomalies of single pixels (so-called “hot pixels”) on the accumulation charge-coupled devices (ACCDs) of ...
F. Weiler   +9 more
doaj   +1 more source

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

open access: yesIEEE Photonics Journal, 2022
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang   +5 more
doaj   +1 more source

Deep Brain Stimulation Reduces Conflict‐Related Theta and Error‐Related Negativity in Patients With Obsessive–Compulsive Disorder

open access: yesNeuromodulation: Technology at the Neural Interface, EarlyView., 2021
Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke   +9 more
wiley   +1 more source

Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs

open access: yesAIP Advances, 2023
It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. Such a trap arises due to random doping fluctuations and is created if a few shallow impurities form a ...
B. I. Fuks
doaj   +1 more source

Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

open access: yesIEEE Journal of the Electron Devices Society, 2021
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao   +7 more
doaj   +1 more source

Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor

open access: yesSensors, 2023
In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao   +6 more
doaj   +1 more source

Detection and analysis of random telegraph signal noise in P-MOSFET

open access: yesDianzi Jishu Yingyong, 2018
Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power,its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin   +3 more
doaj   +1 more source

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