Results 21 to 30 of about 277 (105)

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor

Sensors, 2018
A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise.
Haruki Ishida, Keiichiro Kagawa, Takashi Komuro, Bo Zhang, Min-Woong Seo, Taishi Takasawa, Keita Yasutomi, Shoji Kawahito   +7 more
doaj   +1 more source

Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2015
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

Large Signal Excitation Measurement Techniques for Random Telegraph Signal Noise in MOSFETs [PDF]

, 2005
This paper introduces large signal excitation measurement techniques to analyze Random Telegraph Signal (RTS) noise originating from oxide-traps in MOSFETs. The paper concentrates on the trap-occupancy, which relates directly to the generated noise.
Hoekstra, Eric, E. Hoekstra
core   +1 more source

Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

AIP Advances, 2019
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, Maxim Tsoi   +4 more
doaj   +1 more source

Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors [PDF]

, 2011
The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-
Goiffon, Vincent, Cedric Virmontois, Vincent Goiffon, Virmontois, Cédric, Magnan, Pierre, Pierre Magnan   +5 more
core   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent, Gaillardin, Marc, Virmontois, Cédric, Magnan, Pierre, Martin-Gonthier, Philippe   +4 more
core  

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent, Molina, Romain, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Corbiere, F., Marcelot, Olivier, Magnan, P., Gaillardin, M., Corbière, Franck, Molina, R., Martin-Gonthier, P., Paillet, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Goiffon, V., Marcandella, Claude, Magnan, Pierre, Martin-Gonthier, Philippe   +20 more
core   +1 more source