Results 21 to 30 of about 4,086 (177)
Neuromodulation: Technology at the Neural Interface, EarlyView., 2021 Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke +9 more
wiley +1 more source
Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs
AIP Advances, 2023 It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. Such a trap arises due to random doping fluctuations and is created if a few shallow impurities form a ...
B. I. Fuks
doaj +1 more source
Total Ionizing Dose Radiation-Induced Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors [PDF]
IEEE Transactions on Nuclear Science, 2018 In this work, several studies on Total Ionizing Dose effects on Pinned Photodiode CMOS images sensors are presented. More precisely, the evolution of a parasitic signal called Random Telegraph Signal is analysed through several photodiode designs.
C. Durnez +8 more
semanticscholar +3 more sources
IEEE Journal of the Electron Devices Society, 2021 It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao +7 more
doaj +1 more source
Proton Radiation-Induced Random Telegraph Signal in HgCdTe Photodiode Array
IEEE Transactions on Nuclear Science, 2023 Random telegraph signals (RTSs) affect the performance of electronic devices such as photodiodes and transistors. The presence of this phenomenon in HgCdTe detectors has been reported in the past.
S. Dinand +8 more
semanticscholar +1 more source
Proton induced leakage current in CCDs [PDF]
, 2003 The effect of different proton fluences on the performance of two E2V Technologies CCD47-20 devices was investigated with particular emphasis given to the analysis of 'random telegraph signal' (RTS) generation, bright pixel generation and induced changes
Ambrosi, RM +4 more
core +1 more source
Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
doaj +1 more source
International Conference on Simulation of Semiconductor Processes and Devices, 2021 The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or ...
A. Jay +9 more
semanticscholar +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj +1 more source