Random telegraph signals in proton irradiated CCDs and APS [PDF]
, 2008 Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent +2 more
core +1 more source
Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]
, 2007 In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric +7 more
core +3 more sources
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola +12 more
core +3 more sources
Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
AIP Advances, 2019 We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson +4 more
doaj +1 more source
Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain +5 more
core +3 more sources
Noise Predictions for STM in Systems with Local Electron Nematic Order [PDF]
, 2010 We propose that thermal noise in local stripe orientation should be readily detectable via STM on systems in which local stripe orientations are strongly affected by quenched disorder. Stripes, a unidirectional, nanoscale modulation of electronic charge,
Carlson, E. W. +2 more
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Residual Life Assessment of Oil‐Immersed Insulating Paper by FTIR Feature Interpretability Evolution
High Voltage, EarlyView.ABSTRACT The ageing of insulating paper escalates the peril of insulation failure in oil‐impregnated‐paper power equipment. Consequently, the real‐time monitoring and non‐destructive assessment of insulating paper condition assume paramount significance.
Guangyi Liu +8 more
wiley +1 more source
Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET
, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
core +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
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Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study [PDF]
, 2000 In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs.
Asenov, A. +4 more
core +1 more source