Results 1 to 10 of about 131 (104)

Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]

open access: yesSensors, 2023
In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao   +6 more
doaj   +2 more sources

Human Breast Cancer Cells Demonstrate Electrical Excitability [PDF]

open access: yesFrontiers in Neuroscience, 2020
Breast cancer is one of the most prevalent types of cancers worldwide and yet, its pathophysiology is poorly understood. Single-cell electrophysiological studies have provided evidence that membrane depolarization is implicated in the proliferation and ...
Mafalda Ribeiro   +7 more
doaj   +2 more sources

A high-performance training-free pipeline for robust random telegraph signal characterization via adaptive wavelet-based denoising and Bayesian digitization methods [PDF]

open access: yesScientific Reports
Random telegraph signal (RTS) analysis is increasingly important for characterizing meaningful temporal fluctuations in physical, chemical, and biological systems.
Tonghe Bai, Ayush Kapoor, Na Young Kim
doaj   +2 more sources

Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes [PDF]

open access: yesSensors
This work presents a monolithically integrated short-wavelength infrared (SWIR) image sensor based on indium arsenide (InAs) quantum dot photodiodes (QDPDs).
Myonglae Chu   +22 more
doaj   +2 more sources

Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor [PDF]

open access: yesSensors, 2018
A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise.
Haruki Ishida   +7 more
doaj   +2 more sources

RTS Noise and Dark Current White Defects Reduction Using Selective Averaging Based on a Multi-Aperture System [PDF]

open access: yesSensors, 2014
In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white ...
Bo Zhang   +5 more
doaj   +2 more sources

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

open access: yesIEEE Photonics Journal, 2022
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang   +5 more
doaj   +1 more source

Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process

open access: yesIEEE Journal of the Electron Devices Society, 2021
It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao   +7 more
doaj   +1 more source

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

open access: yesIEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Detection and analysis of random telegraph signal noise in P-MOSFET

open access: yesDianzi Jishu Yingyong, 2018
Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power,its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin   +3 more
doaj   +1 more source

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