Results 21 to 30 of about 1,687 (140)
Noise Predictions for STM in Systems with Local Electron Nematic Order [PDF]
, 2010 We propose that thermal noise in local stripe orientation should be readily detectable via STM on systems in which local stripe orientations are strongly affected by quenched disorder. Stripes, a unidirectional, nanoscale modulation of electronic charge,
Carlson, E. W. +2 more
core +3 more sources
RTS noise reduction of CMOS image sensors using amplifier-selection pixels [PDF]
, 2013 This paper describes a RTS (random telegraph signal) noise reduction technique for an active pixel CMOS image sensor (CIS) with in-pixel selectable dual source-follower amplifiers.
Kagawa, Kiichiro +4 more
core +1 more source
Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
AIP Advances, 2019 We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson +4 more
doaj +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2019 The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao +8 more
doaj +1 more source
Analysis of leakage current noise in thin-gate dielectric devices [PDF]
AIP AdvancesIn MOSFETs, the gate leakage current induced by direct tunneling through the gate oxide layer has become a critical factor affecting device reliability and power consumption.
Bing Ding +3 more
doaj +1 more source
Random telegraph signals in proton irradiated CCDs and APS [PDF]
, 2008 Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent +2 more
core +1 more source
Proton induced leakage current in CCDs [PDF]
, 2003 The effect of different proton fluences on the performance of two E2V Technologies CCD47-20 devices was investigated with particular emphasis given to the analysis of 'random telegraph signal' (RTS) generation, bright pixel generation and induced changes
Ambrosi, RM +4 more
core +1 more source
Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
IEEE Journal of the Electron Devices Society, 2018 The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated.
Sung-Kyu Kwon +11 more
doaj +1 more source
Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology [PDF]
, 2009 A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18um ...
Bernard, Frédéric +5 more
core +1 more source