Results 11 to 20 of about 1,687 (140)
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]
IEEE Transactions on Electron Devices, 2003 In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M. +3 more
core +5 more sources
Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]
IEEE Electron Device Letters, 2011 This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc +4 more
core +3 more sources
Noise Suppression in Organic Photodiodes: A Comprehensive Review of Mechanistic Insights and Design Principles. [PDF]
SmallOrganic photodiodes are limited by dark current and excess low‐frequency noise. This review synthesizes mechanisms of noise, links to three leakage pathways, and unifies measurement practice with device design. By outlining energetics, morphology, and interface strategies, it provides validated routes to lower noise floors and higher detectivity across
Lee GM, Kim TH, Kim Y, Shim JW.
europepmc +2 more sources
Neuromodulation: Technology at the Neural Interface, EarlyView., 2021 Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke +9 more
wiley +1 more source
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IEEE Journal of the Electron Devices Society, 2020 The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj +1 more source
Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
doaj +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj +1 more source
Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
IEEE Journal of the Electron Devices Society, 2015 Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj +1 more source
Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]
, 2007 In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric +7 more
core +3 more sources