Results 11 to 20 of about 131 (104)

Noise Suppression in Organic Photodiodes: A Comprehensive Review of Mechanistic Insights and Design Principles. [PDF]

Small
Organic photodiodes are limited by dark current and excess low‐frequency noise. This review synthesizes mechanisms of noise, links to three leakage pathways, and unifies measurement practice with device design. By outlining energetics, morphology, and interface strategies, it provides validated routes to lower noise floors and higher detectivity across
Lee GM, Kim TH, Kim Y, Shim JW.
europepmc   +2 more sources

Deep Brain Stimulation Reduces Conflict‐Related Theta and Error‐Related Negativity in Patients With Obsessive–Compulsive Disorder

Neuromodulation: Technology at the Neural Interface, EarlyView., 2021
Abstract Objectives Obsessive–compulsive disorder (OCD) is a psychiatric disorder with alterations of cortico‐striato‐thalamo‐cortical loops and impaired performance monitoring. Electrophysiological markers such as conflict‐related medial frontal theta (MFT) and error‐related negativity (ERN) may be altered by clinically effective deep brain ...
Elena Sildatke, Theo O. J. Gruendler, Markus Ullsperger, Till A. Dembek, Juan Carlos Baldermann, Sina Kohl, Veerle Visser‐Vandewalle, Daniel Huys, Jens Kuhn, Thomas Schüller   +9 more
wiley   +1 more source

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2018
In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj   +1 more source

Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2015
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj   +1 more source

Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

AIP Advances, 2019
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, Maxim Tsoi   +4 more
doaj   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

Analysis of leakage current noise in thin-gate dielectric devices [PDF]

AIP Advances
In MOSFETs, the gate leakage current induced by direct tunneling through the gate oxide layer has become a critical factor affecting device reliability and power consumption.
Bing Ding, Wenpeng Zhang, Liang He, Xiaofei Jia   +3 more
doaj   +1 more source

Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs

IEEE Journal of the Electron Devices Society, 2018
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated.
Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee   +11 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Observations of Tidal Induced Responses in Self‐Potential Data in a UK Beach Sand Aquifer: Implications for Monitoring Seawater Intrusion

Journal of Geophysical Research: Solid Earth, Volume 131, Issue 3, March 2026.
Abstract Affordable and effective early warning of saline intrusion into aquifers is a key challenge affecting coastal water supplies. This paper reports on self‐potential (SP) monitoring close to a mobile saline‐fresh water interface over a 3‐month period.
T. S. L. Rowan, A. P. Butler, M. C. McDonnell, J. F. Águila, R. Flynn, G. A. Hamill, S. Donohue, M. D. Jackson   +7 more
wiley   +1 more source