Results 31 to 40 of about 277 (105)
Systematic pressure and temperature treatment of the sodium ion electrolyte Na2.9Sb0.9W0.1S4 enabled deep insight into the effects of these parameters on the sodium conductivities and their impedance‐spectroscopic measurements, and afforded a material exhibiting a record superionic conductivity of 44.7 mS cm−1 at pressures down to 18 MPa and an ...
Miriam R. Bauer +2 more
wiley +1 more source
Analysis of leakage current noise in thin-gate dielectric devices [PDF]
In MOSFETs, the gate leakage current induced by direct tunneling through the gate oxide layer has become a critical factor affecting device reliability and power consumption.
Bing Ding +3 more
doaj +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Effects of Fluorine on the NBTI Reliability and Low-Frequency Noise Characteristics of p-MOSFETs
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated.
Sung-Kyu Kwon +11 more
doaj +1 more source
Polychromatic BFs with exceptional EMI and thermal shielding were fabricated based on a “plasma activation‐ALD bridging‐chemical plating‐post annealing treatments” gradient functionalization strategy. As prepared, basalt fiber/fabric demonstrates outstanding EMI SE of 53.47 dB and thermal infrared camouflage effect.
Sijie Qiao +13 more
wiley +1 more source
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade [PDF]
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subthreshold slope well below 60 mV/decade are investigated by Random Telegraph Signal (RTS) noise measurements.
Elvedin Memisevic +15 more
core +1 more source
Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study [PDF]
International audienceThe origin of the random telegraph signal (RTS)observed in semiconductors-based electronic devices is still sub-ject to debates. In this work, by means of atomistic simulations,typical clusters of defects as could be obtained after ...
Rideau, Denis +30 more
core +1 more source
Abstract Purpose Remnant‐preserving anterior cruciate ligament reconstruction (RP‐ACLR) has garnered interest due to its potential biological benefits. This study aimed to compare graft survival, complication and reoperation rates between RP‐ACLR and standard remnant‐sacrificing techniques (non‐remnant‐preserving ACLR [NP‐ACLR]), with subgroup analysis
Ozgur Basal +6 more
wiley +1 more source
Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution [PDF]
In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect transistors when the device is periodically and rapidly cycled between an "on" and an "off" bias state.
Klumperink, E.A.M. +3 more
core +1 more source
Abstract Affordable and effective early warning of saline intrusion into aquifers is a key challenge affecting coastal water supplies. This paper reports on self‐potential (SP) monitoring close to a mobile saline‐fresh water interface over a 3‐month period.
T. S. L. Rowan +7 more
wiley +1 more source

