Results 31 to 40 of about 4,086 (177)

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

IEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2015
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj   +1 more source

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

IEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao, Thomas M.-H. Wu, Shang-Fu Yeh, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet, Vincent Goiffon   +8 more
doaj   +1 more source

Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

IEEE Transactions on Nuclear Science, 2020
This work investigates the role of the phosphorus doping element in the radiation-induced dark current in a CMOS image sensor (CIS) photodiode. The neutron and proton irradiations on shallow arsenic-based photodiode CISs and deep phosphorus-based ...
A. Le Roch, C. Virmontois, P. Paillet, J. Belloir, S. Rizzolo, O. Marcelot, H. Dewitte, M. Van Uffelen, L. M. Casellas, P. Magnan, V. Goiffon   +10 more
semanticscholar   +1 more source

Random telegraph signals in proton irradiated CCDs and APS [PDF]

, 2008
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent, Hopkinson, Gordon R., Mohammadzadeh, Ali   +2 more
core   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola, Corbière, Franck, Estribeau, Magali, Gaillardin, Marc, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Marcandella, Claude, Marcelot, Olivier, Martin-Gonthier, Philippe, Molina, Romain, Paillet, Philippe, Virmontois, Cédric   +12 more
core   +3 more sources

Low-Frequency Noise Phenomena in Switched MOSFETs [PDF]

, 2007
In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects.
Hoekstra, Eric, Klumperink, Eric A.M., Kolhatkar, Jay S., Nauta, Bram, Salm, Cora, Snoeij, Martijn F., Wallinga, Hans, Wel, Arnoud P. van der   +7 more
core   +3 more sources

Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

AIP Advances, 2019
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, Maxim Tsoi   +4 more
doaj   +1 more source

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study [PDF]

, 2000
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs.
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.   +4 more
core   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain, Corbière, Franck, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Virmontois, Cédric   +5 more
core   +3 more sources