Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs [PDF]
Scientific Reports, 2021 This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation.
F. Di Capua +5 more
doaj +2 more sources
Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor [PDF]
Sensors, 2018 A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise.
Haruki Ishida +7 more
doaj +2 more sources
A high-performance training-free pipeline for robust random telegraph signal characterization via adaptive wavelet-based denoising and Bayesian digitization methods [PDF]
Scientific ReportsRandom telegraph signal (RTS) analysis is increasingly important for characterizing meaningful temporal fluctuations in physical, chemical, and biological systems.
Tonghe Bai, Ayush Kapoor, Na Young Kim
doaj +2 more sources
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]
Sensors, 2023 In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao +6 more
doaj +2 more sources
Results in Physics, 2020 The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu +9 more
doaj +3 more sources
Random Telegraph Signal in a Metallic Double-Dot System [PDF]
Nano Letters, 2014 4 ...
Yuval Vardi
exaly +4 more sources
Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes † [PDF]
SensorsThis work presents a monolithically integrated short-wavelength infrared (SWIR) image sensor based on indium arsenide (InAs) quantum dot photodiodes (QDPDs).
Myonglae Chu +22 more
doaj +2 more sources
Post-processing of real-time quantum event measurements for an optimal bandwidth [PDF]
Scientific Reports, 2023 Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising
J. Kerski +9 more
doaj +2 more sources
Sensors, 2023 Effects of hot pixels on pixel performance in light and dark environments have been investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors irradiated by 10 MeV protons.
Bingkai Liu +4 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 It is difficult to measure the random telegraph noises (RTN) of MOSFET subthreshold currents at the sub-pA level directly and accurately. In this work, we used a charge integration method similar to the operation of the CMOS image sensors (CIS) to ...
Calvin Yi-Ping Chao +7 more
doaj +1 more source