Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs [PDF]
Scientific Reports, 2021 This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation.
F. Di Capua +5 more
doaj +2 more sources
Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET [PDF]
Physics Letters A, 2006 We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni +16 more
core +7 more sources
Random telegraph signals in proton irradiated CCDs and APS [PDF]
IEEE Transactions on Nuclear Science, 2008 Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV.
Goiffon, Vincent +2 more
core +4 more sources
Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor [PDF]
Sensors, 2018 A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise.
Haruki Ishida +7 more
doaj +2 more sources
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]
Sensors, 2023 In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao +6 more
doaj +2 more sources
A high-performance training-free pipeline for robust random telegraph signal characterization via adaptive wavelet-based denoising and Bayesian digitization methods [PDF]
Scientific ReportsRandom telegraph signal (RTS) analysis is increasingly important for characterizing meaningful temporal fluctuations in physical, chemical, and biological systems.
Tonghe Bai, Ayush Kapoor, Na Young Kim
doaj +2 more sources
Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors [PDF]
IEEE Electron Device Letters, 2011 This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Vincent Goiffon, Cédric Virmontois
exaly +3 more sources
Random telegraph-signal noise in junctionless transistors [PDF]
Applied Physics Letters, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature.
Akhavan, Nima Dehdashti +5 more
core +3 more sources
Effects of Hot Pixels on Pixel Performance on Backside Illuminated Complementary Metal Oxide Semiconductor (CMOS) Image Sensors [PDF]
Sensors, 2023 Effects of hot pixels on pixel performance in light and dark environments have been investigated in pinned photodiode 0.18 μm backside illuminated CMOS image sensors irradiated by 10 MeV protons.
Bingkai Liu +4 more
doaj +2 more sources
Results in Physics, 2020 The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu +9 more
doaj +3 more sources