Results 11 to 20 of about 946 (248)
Random telegraph signals in molecular junctions
Journal of Physics: Condensed Matter, 2014 We investigate conductance fluctuations in molecular junctions using a mechanically controllable break junction setup in a liquid environment. In contrast to conventional break junction measurements, time-dependent conductance signals were recorded while reducing the gap size between the two contact electrodes.
Brunner, Jan +3 more
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Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs
AIP Advances, 2023 It is shown that ultra-small MOSFETs with heavily doped substrates contain a significant concentration of slow traps in their space-charge regions. Such a trap arises due to random doping fluctuations and is created if a few shallow impurities form a ...
B. I. Fuks
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Random telegraph signal analysis with a recurrent neural network [PDF]
Physical Review E, 2020 We use an artificial neural network to analyze asymmetric noisy random telegraph signals (RTSs), and extract underlying transition rates. We demonstrate that a long short-term memory neural network can vastly outperform conventional methods, particularly for noisy signals. Our technique gives reliable results as the signal-to-noise ratio approaches one,
N. J. Lambert +4 more
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Sensors, 2021 Strain measurements using fibre Bragg grating (FBG) optical sensors are becoming ever more commonplace. However, in some cases, these measurements can become corrupted by sudden jumps in the signal, which manifest as spikes or step-like offsets in the ...
Dominik Johannes Marius Fallais +4 more
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Characterization of dark current signal measurements of the ACCDs used on board the Aeolus satellite [PDF]
Atmospheric Measurement Techniques, 2021 Even just shortly after the successful launch of the European Space Agency satellite Aeolus in August 2018, it turned out that dark current signal anomalies of single pixels (so-called “hot pixels”) on the accumulation charge-coupled devices (ACCDs) of ...
F. Weiler +9 more
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RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices [PDF]
APL Machine LearningRandom telegraph noise is a prevalent variability phenomenon in nanoelectronic devices, arising from stochastic carrier exchange at defect sites and critically impacting device reliability and performance.
Anirudh Varanasi +3 more
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Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
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Microwave irradiation effects on random telegraph signal in a MOSFET [PDF]
Physics Letters A, 2007 3 pages, 4 ...
E. PRATI +4 more
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Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes
IEEE Journal of the Electron Devices Society, 2018 An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal +5 more
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RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
Nanoscale Research Letters, 2019 In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen +2 more
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