Random Telegraph Noise in 3D NAND Flash Memories [PDF]
Micromachines, 2021 In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
doaj +8 more sources
Random-telegraph-noise-enabled true random number generator for hardware security. [PDF]
Sci Rep, 2020 The future security of Internet of Things is a key concern in the cyber-security field. One of the key issues is the ability to generate random numbers with strict power and area constrains.
Brown J +6 more
europepmc +7 more sources
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures [PDF]
Nanomaterials, 2022 In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based ...
Yue Ma +6 more
doaj +3 more sources
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator
Advanced Intelligent Systems, 2023 Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in ...
Min Suk Song +5 more
doaj +3 more sources
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude [PDF]
IEEE Access, 2021 The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi +6 more
doaj +3 more sources
A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories
Mathematics, 2021 A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro +3 more
doaj +4 more sources
Analysis of random telegraph noise in resistive memories: The case of unstable filaments [PDF]
Micro and Nano Engineering, 2023 Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis +4 more
doaj +2 more sources
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]
Sensors, 2023 In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao +6 more
doaj +2 more sources
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators
IEEE Journal of the Electron Devices Society, 2022 In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise.
Mauricio Banaszeski da Silva +2 more
doaj +2 more sources
RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices [PDF]
APL Machine LearningRandom telegraph noise is a prevalent variability phenomenon in nanoelectronic devices, arising from stochastic carrier exchange at defect sites and critically impacting device reliability and performance.
Anirudh Varanasi +3 more
doaj +2 more sources