Random Telegraph Noise in 3D NAND Flash Memories [PDF]
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the ...
Alessandro S. Spinelli +3 more
doaj +4 more sources
Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor [PDF]
In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant
Calvin Yi-Ping Chao +6 more
doaj +4 more sources
Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures [PDF]
In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based ...
Yue Ma +6 more
doaj +2 more sources
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator
Memristor devices can be utilized for various computing applications, and stochastic computing is one of them. The intrinsic stochastic characteristics of the memristor cause unpredictable current fluctuations by the capture and emission of electrons in ...
Min Suk Song +5 more
doaj +2 more sources
Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method [PDF]
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper.
Calvin Yi-Ping Chao +6 more
doaj +2 more sources
A stochastic encoder using point defects in two-dimensional materials [PDF]
While defects are undesirable for the reliability of electronic devices, particularly in scaled microelectronics, they have proven beneficial in numerous quantum and energy-harvesting applications. However, their potential for new computational paradigms,
Harikrishnan Ravichandran +13 more
doaj +2 more sources
High-Temperature Annealing of Random Telegraph Noise in a Stacked CMOS Image Sensor After Hot-Carrier Stress [PDF]
This paper studies the temperature effects on device aging, particularly the random telegraph noise (RTN) degradation and the threshold voltage (Vt) shift in a stacked CMOS image sensor (CIS) caused by hot-carrier stress (HCS). Measurements indicate that
Calvin Yi-Ping Chao +8 more
doaj +2 more sources
What can we learn when fitting a simple telegraph model to a complex gene expression model? [PDF]
In experiments, the distributions of mRNA or protein numbers in single cells are often fitted to the random telegraph model which includes synthesis and decay of mRNA or protein, and switching of the gene between active and inactive states.
Feng Jiao +6 more
doaj +2 more sources
A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories
A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time.
Juan E. Ruiz-Castro +3 more
doaj +3 more sources
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators
In highly scaled MOSFETs, random telegraph noise (RTN) can decrease the reliability and yield of circuits. RTN is produced by charge trapping, which in large devices results in $1/f$ noise.
Mauricio Banaszeski da Silva +2 more
doaj +1 more source

