Results 21 to 30 of about 125,218 (322)
Random telegraph-signal noise in junctionless transistors [PDF]
Applied Physics Letters, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed.
Nazarov, Alexei N. +5 more
openaire +3 more sources
Enhanced statistical detection of random telegraph noise in frequency and time domain
Solid-State Electronics, 2022 Owen Gauthier +2 more
exaly +2 more sources
Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime [PDF]
IEEE Electron Device Letters, 2022 We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel.
HeeBong Yang +5 more
semanticscholar +1 more source
FROM PERSISTENT RANDOM WALK TO THE TELEGRAPH NOISE [PDF]
Stochastics and Dynamics, 2010 We study a family of memory-based persistent random walks and we prove weak convergences after space-time rescaling. The limit processes are not only Brownian motions with drift. We have obtained a continuous but non-Markov process (Zt) which can be easily expressed in terms of a counting process (Nt).
Herrmann, Samuel, Vallois, Pierre
openaire +3 more sources
Journal of Applied Physics, 2023 As devices scale closer to the atomic size, a complete understanding of the physical mechanisms involving defects in high-κ dielectrics is essential to improve the performance of electron devices and to mitigate key reliability phenomena, such as Random ...
Sara Vecchi, P. Pavan, F. Puglisi
semanticscholar +1 more source
Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs
APL Materials, 2023 The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K.
H. S. Alagoz +3 more
doaj +1 more source
Applied Physics Letters, 2023 Low frequency noise (LFN) and random telegraph noise (RTN) are investigated statistically on nanoscale MOSFETs of 28 nm fully depleted silicon-on-insulator technology. The analysis reveals that the mean noise level is well described by the carrier number
O. Gauthier +3 more
semanticscholar +1 more source
Resonance fluorescence of noisy systems
New Journal of Physics, 2023 Light scattering from resonantly or nearly resonantly excited systems, known as resonance fluorescence (RF), has been gaining importance as a versatile tool for investigating quantum states of matter and readout of quantum information, recently including
Rafał A Bogaczewicz +1 more
doaj +1 more source
Greedy versus map-based optimized adaptive algorithms for random-telegraph-noise mitigation by spectator qubits [PDF]
Physical Review A, 2022 In a scenario where data-storage qubits are kept in isolation as far as possible, with minimal measurements and controls, noise mitigation can still be done using additional noise probes, with corrections applied only when needed.
Behnam Tonekaboni +4 more
semanticscholar +1 more source
Committee machines—a universal method to deal with non-idealities in memristor-based neural networks
Nature Communications, 2020 Designing reliable and energy-efficient memristor-based artificial neural networks remains a challenge. Here, the authors demonstrate a technology-agnostic approach, committee machines, which increases the inference accuracy of memristive neural networks
D. Joksas +9 more
doaj +1 more source