Results 41 to 50 of about 125,218 (322)
Particle and Photon Detection: Counting and Energy Measurement
Sensors, 2016 Fundamental limits for photon counting and photon energy measurement are reviewed for CCD and CMOS imagers. The challenges to extend photon counting into the visible/nIR wavelengths and achieve energy measurement in the UV with specific read noise ...
James Janesick, John Tower
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Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain
IEEE Journal of the Electron Devices Society, 2022 This work presents a new method for the Verilog-A implementation of Lorentzian noise models, in a module called VERILOR, which can automatically generate either Lorentzian or 1/f-like noise spectra depending on the trap density and gate oxide area, for ...
Angeliki Tataridou +2 more
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Disentanglement and decoherence from classical non-Markovian noise: random telegraph noise [PDF]
Quantum Information Processing, 2010 11 pages, 7 figures, accepted by ...
Dong Zhou, Alex Lang, Robert Joynt
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IEEE Journal of the Electron Devices Society, 2018 In this paper, we have developed a methodology of a lateral profiling technique of the channel local temperature in 14 nm FinFET, incurred by the self-heating effect (SHE). As SHE happens, the thermal source generated near the drain will dissipate toward
E Ray Hsieh +7 more
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Effect of random telegraph noise on entanglement and nonlocality of a qubit-qutrit system [PDF]
Iranian Journal of Astronomy and Astrophysics, 2017 We study the evolution of entanglement and nonlocality of a non-interacting qubit-qutrit system under the effect of random telegraph noise (RTN) in independent and common environments in Markovian and non-Markovian regimes.
Hakimeh Jaghouri, Samira Nazifkar
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Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
AIP Advances, 2019 We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson +4 more
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Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes
IEEE Journal of the Electron Devices Society, 2018 An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal +5 more
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RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
Nanoscale Research Letters, 2019 In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen +2 more
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IEEE transactions on device and materials reliability, 2021 The low-frequency noise of short channel triple-gate junctionless (TG JL) MOSFET has been investigated in the frequency and time domains before and after hot carrier aging (HCA).
T. Oproglidis +6 more
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The amplitude of random telegraph noise: Scaling implications [PDF]
2012 IEEE International Reliability Physics Symposium (IRPS), 2012 We introduce a simple and intuitive model to relate the amplitude of random telegraph noise (RTN) fluctuations to the columbic influence of single trap charges on the inversion layer. The prediction of this model is in excellent agreement with results extracted from experiment using the “hole-in-the-inversion-layer” model for RTN amplitude.
Cheung, Kin P. +3 more
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