Results 31 to 40 of about 27,419 (285)
Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
AIP Advances, 2019 We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson +4 more
doaj +1 more source
RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
Nanoscale Research Letters, 2019 In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen +2 more
doaj +1 more source
Equivalent qubit dynamics under classical and quantum noise
, 2007 We study the dynamics of quantum systems under classical and quantum noise, focusing on decoherence in qubit systems. Classical noise is described by a random process leading to a stochastic temporal evolution of a closed quantum system, whereas quantum ...
H. J. Charmichael +7 more
core +1 more source
The amplitude of random telegraph noise: Scaling implications [PDF]
2012 IEEE International Reliability Physics Symposium (IRPS), 2012 We introduce a simple and intuitive model to relate the amplitude of random telegraph noise (RTN) fluctuations to the columbic influence of single trap charges on the inversion layer. The prediction of this model is in excellent agreement with results extracted from experiment using the “hole-in-the-inversion-layer” model for RTN amplitude.
Cheung, Kin P. +3 more
openaire +2 more sources
Trapped charge dynamics in InAs nanowires
, 2012 We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trapping in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual ...
Baugh, Jonathan +4 more
core +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
core +1 more source
Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes
IEEE Journal of the Electron Devices Society, 2018 An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal +5 more
doaj +1 more source
Telegraph noise effects on two charge-qubits in double quantum dots
, 2013 We analyze theoretically the decoherence of two interacting electrons in a double self-assembled quantum dot due to a random telegraph noise. For this purpose we have examined the pure dephasing rate by evaluating the decoherence factor.
Ayachi, A. +3 more
core +1 more source
Disentanglement and decoherence from classical non-Markovian noise: random telegraph noise [PDF]
Quantum Information Processing, 2010 11 pages, 7 figures, accepted by ...
Dong Zhou, Alex Lang, Robert Joynt
openaire +2 more sources
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
Micromachines, 2022 In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials.
Woo Sik Choi +3 more
doaj +1 more source