An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants [PDF]
IEEE Access, 2020 As transistor sizes are downscaled, a single trapped charge has a larger impact on smaller devices and the Random Telegraph Noise (RTN) becomes increasingly important.
Mehzabeen Mehedi +6 more
doaj +2 more sources
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude [PDF]
IEEE Access, 2021 The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi +6 more
doaj +2 more sources
Random telegraph-signal noise in junctionless transistors [PDF]
Applied Physics Letters, 2011 Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature.
Akhavan, Nima Dehdashti +5 more
core +3 more sources
Random-telegraph-noise-enabled true random number generator for hardware security. [PDF]
Sci Rep, 2020 AbstractThe future security of Internet of Things is a key concern in the cyber-security field. One of the key issues is the ability to generate random numbers with strict power and area constrains. “True Random Number Generators” have been presented as a potential solution to this problem but improvements in output bit rate, power consumption, and ...
Brown J +6 more
europepmc +4 more sources
FROM PERSISTENT RANDOM WALK TO THE TELEGRAPH NOISE [PDF]
Stochastics and Dynamics, 2010 We study a family of memory-based persistent random walks and we prove weak convergences after space-time rescaling. The limit processes are not only Brownian motions with drift. We have obtained a continuous but non-Markov process (Zt) which can be easily expressed in terms of a counting process (Nt).
Herrmann, Samuel, Vallois, Pierre
openaire +3 more sources
Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs
APL Materials, 2023 The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K.
H. S. Alagoz +3 more
doaj +1 more source
On the Impact of the Biasing History on the Characterization of Random Telegraph Noise
IEEE Transactions on Instrumentation and Measurement, 2022 Peer ...
Pablo Saraza-Canflanca +6 more
openaire +3 more sources
Resonance fluorescence of noisy systems
New Journal of Physics, 2023 Light scattering from resonantly or nearly resonantly excited systems, known as resonance fluorescence (RF), has been gaining importance as a versatile tool for investigating quantum states of matter and readout of quantum information, recently including
Rafał A Bogaczewicz +1 more
doaj +1 more source
RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices [PDF]
APL Machine LearningRandom telegraph noise is a prevalent variability phenomenon in nanoelectronic devices, arising from stochastic carrier exchange at defect sites and critically impacting device reliability and performance.
Anirudh Varanasi +3 more
doaj +1 more source
Committee machines—a universal method to deal with non-idealities in memristor-based neural networks
Nature Communications, 2020 Designing reliable and energy-efficient memristor-based artificial neural networks remains a challenge. Here, the authors demonstrate a technology-agnostic approach, committee machines, which increases the inference accuracy of memristive neural networks
D. Joksas +9 more
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