Results 31 to 40 of about 31,302 (278)
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Micro and Nano Engineering, 2023 Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis +4 more
doaj +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
Random telegraph signals in charge coupled devices [PDF]
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004 An investigation of fluctuating pixels resulting from proton irradiation of an E2V Technologies CCD47-20 device is presented. The device structure, experimental set up and irradiation methodology are described, followed by a detailed analysis of radiation induced random telegraph signals, RTS.
Smith, DR, Holland, AD, Hutchinson, IB
openaire +2 more sources
IEEE Journal of the Electron Devices Society, 2019 The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao +8 more
doaj +1 more source
Effect of dissipation and measurement on a tunneling system [PDF]
, 1995 We consider a parametrically driven Kerr medium in which the pumping may be sinusoidally varied. It has been previously found that this system exhibits coherent tunneling between two fixed points which can be either enhanced or suppressed by altering the
A. Caldeira +18 more
core +1 more source
Noise Reduction Methods for Charge Stability Diagrams of Double Quantum Dots
IEEE Transactions on Quantum Engineering, 2022 Operating semiconductor quantum dots as quantum bits requires isolating single electrons by adjusting gate voltages. The transitions of electrons to and from the dots appear as a honeycomb-like pattern in recorded charge stability diagrams (CSDs).
Sarah Fleitmann +6 more
doaj +1 more source
Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study [PDF]
, 2000 In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs.
Asenov, A. +4 more
core +1 more source
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs [PDF]
2016 46th European Solid-State Device Research Conference (ESSDERC), 2016 The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche.
Vishal Agarwal +5 more
openaire +2 more sources
Individuality of Dopants in Silicon Nano-pn Junctions
Medžiagotyra, 2014 The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist.
Daniel MORARU +7 more
doaj +1 more source
Proton induced leakage current in CCDs [PDF]
, 2003 The effect of different proton fluences on the performance of two E2V Technologies CCD47-20 devices was investigated with particular emphasis given to the analysis of 'random telegraph signal' (RTS) generation, bright pixel generation and induced changes
Ambrosi, RM +4 more
core +1 more source