Results 31 to 40 of about 946 (248)

1/ ${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

open access: yesIEEE Journal of the Electron Devices Society, 2020
The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN.
Shi Shen, Jie Yuan
doaj   +1 more source

RTS Noise and Dark Current White Defects Reduction Using Selective Averaging Based on a Multi-Aperture System

open access: yesSensors, 2014
In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white ...
Bo Zhang   +5 more
doaj   +1 more source

Evidence of resistive switching into a dynamical state in antiferromagnetic iridates

open access: yesAIP Advances, 2019
We investigate the electrically-driven switching between low and high resistance states in antiferromagnetic Sr3Ir2O7 single crystals. We demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is ...
Morgan Williamson   +4 more
doaj   +1 more source

On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude

open access: yesIEEE Access, 2021
The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs.
Mehzabeen Mehedi   +6 more
doaj   +1 more source

Clinical, Histologic, and Serological Predictors of Renal Function Loss in Lupus Nephritis

open access: yesArthritis Care &Research, EarlyView.
Objective Kidney survival is the ultimate goal in lupus nephritis (LN) management, but long‐term predictors remain inadequately studied, requiring long‐term follow‐up. This study aimed to identify baseline and early longitudinal predictors of kidney survival in the Accelerating Medicines Partnership LN longitudinal cohort.
Shangzhu Zhang   +21 more
wiley   +1 more source

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

open access: yesIEEE Journal of the Electron Devices Society, 2018
In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj   +1 more source

Random telegraph signal (RTS) in the Euclid IR H2RGs [PDF]

open access: yesHigh Energy, Optical, and Infrared Detectors for Astronomy VIII, 2018
Euclid is an ESA mission to map the geometry of the dark Universe with a planned launch date in 2021. Euclid is optimised for two primary cosmological probes, weak gravitational lensing and baryonic acoustic oscillations. They are implemented through two science instruments on-board Euclid, a visible imager (VIS) and a near-infrared photometer ...
Kohley, Ralf   +12 more
openaire   +2 more sources

Productivity‐Driven Optimization of Laser Powder Bed Fusion Parameters for IN718 Superalloy: Process Control, Microstructure, and Mechanical Properties

open access: yesAdvanced Engineering Materials, EarlyView.
This study demonstrates how optimizing laser power, scanning speed, and hatching distance in laser powder bed fusion can boost the productivity of Inconel 718 manufacturing by up to 29% while maintaining mechanical integrity. The work delivers a validated process window and cost–time analysis, offering industry‐ready guidelines for efficient additive ...
Amir Behjat   +7 more
wiley   +1 more source

Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

open access: yesIEEE Journal of the Electron Devices Society, 2015
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise.
Kapil Jainwal, Kushal Shah, Mukul Sarkar
doaj   +1 more source

Understanding the Stochastic Nature of Process Parameter Development of Blown Powder Laser Beam Directed Energy Deposition Additive Manufacturing of Pure Molybdenum

open access: yesAdvanced Engineering Materials, EarlyView.
Identified through the use of statistical design of experiments and metallographic investigation, this study exposes the stochastic origins of intergranular cracks in blown powder laser beam directed energy deposition additive manufacturing of pure molybdenum. It further demonstrates a successful crack mitigation approach with direct correlation to the
Nathaniel J. Lies   +2 more
wiley   +1 more source

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