Results 21 to 30 of about 31,302 (278)
Detection and analysis of random telegraph signal noise in P-MOSFET
Dianzi Jishu Yingyong, 2018 Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to
Fan Xinxin +3 more
doaj +1 more source
Visualisation Techniques for Random Telegraph Signals in MOSFETs [PDF]
, 2004 In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced.
Hoekstra, Erik +4 more
core +7 more sources
Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes
IEEE Journal of the Electron Devices Society, 2018 An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal +5 more
doaj +1 more source
RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
Nanoscale Research Letters, 2019 In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen +2 more
doaj +1 more source
IEEE Photonics Journal, 2022 Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang +5 more
doaj +1 more source
A random telegraph signal of Mittag-Leffler type [PDF]
Physica A: Statistical Mechanics and its Applications, 2009 A general method is presented to explicitly compute autocovariance functions for non-Poisson dichotomous noise based on renewal theory. The method is specialized to a random telegraph signal of Mittag-Leffler type. Analytical predictions are compared to Monte Carlo simulations.
FERRARO S +3 more
openaire +3 more sources
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Magnan, Pierre +1 more
core +1 more source
Detection and Measurement of Spin-Dependent Dynamics in Random Telegraph Signals [PDF]
Physical Review Letters, 2013 A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics
House, M. G. +6 more
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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain +5 more
core +3 more sources
Random on–off telegraphic signaling in single nanoparticles and molecules [PDF]
Nano Reviews, 2010 Fluorescence blinking is a universal phenomenon in single molecule/particle detection of fluorophores. Much attention has been directed toward unraveling the cause of blinking, the underlying mechanism for the inverse power-law blinking statistics, and the environmental effects on blinking. More recent developments in fluorescence blinking include less
openaire +3 more sources