Results 21 to 30 of about 946 (248)

Modeling With RTS Noise Characterization of Novel Embedded Photogate Single-Photon Avalanche Diode for Circuit Simulations

open access: yesIEEE Photonics Journal, 2022
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang   +5 more
doaj   +1 more source

Detection and Measurement of Spin-Dependent Dynamics in Random Telegraph Signals [PDF]

open access: yesPhysical Review Letters, 2013
A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics
House, M. G.   +6 more
openaire   +3 more sources

A random telegraph signal of Mittag-Leffler type [PDF]

open access: yesPhysica A: Statistical Mechanics and its Applications, 2009
A general method is presented to explicitly compute autocovariance functions for non-Poisson dichotomous noise based on renewal theory. The method is specialized to a random telegraph signal of Mittag-Leffler type. Analytical predictions are compared to Monte Carlo simulations.
FERRARO S   +3 more
openaire   +3 more sources

Analysis of random telegraph noise in resistive memories: The case of unstable filaments

open access: yesMicro and Nano Engineering, 2023
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis   +4 more
doaj   +1 more source

Random telegraph signals in charge coupled devices [PDF]

open access: yesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004
An investigation of fluctuating pixels resulting from proton irradiation of an E2V Technologies CCD47-20 device is presented. The device structure, experimental set up and irradiation methodology are described, followed by a detailed analysis of radiation induced random telegraph signals, RTS.
Smith, DR, Holland, AD, Hutchinson, IB
openaire   +2 more sources

Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation

open access: yesIEEE Journal of the Electron Devices Society, 2019
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao   +8 more
doaj   +1 more source

Random Telegraph Signals in Proton Irradiated CCDs and APS

open access: yesIEEE Transactions on Nuclear Science, 2007
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type.
Hopkinson, Gordon R.   +2 more
openaire   +3 more sources

Noise Reduction Methods for Charge Stability Diagrams of Double Quantum Dots

open access: yesIEEE Transactions on Quantum Engineering, 2022
Operating semiconductor quantum dots as quantum bits requires isolating single electrons by adjusting gate voltages. The transitions of electrons to and from the dots appear as a honeycomb-like pattern in recorded charge stability diagrams (CSDs).
Sarah Fleitmann   +6 more
doaj   +1 more source

Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs [PDF]

open access: yes2016 46th European Solid-State Device Research Conference (ESSDERC), 2016
The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche.
Vishal Agarwal   +5 more
openaire   +2 more sources

Individuality of Dopants in Silicon Nano-pn Junctions

open access: yesMedžiagotyra, 2014
The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist.
Daniel MORARU   +7 more
doaj   +1 more source

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