Results 21 to 30 of about 946 (248)
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang +5 more
doaj +1 more source
Detection and Measurement of Spin-Dependent Dynamics in Random Telegraph Signals [PDF]
A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics
House, M. G. +6 more
openaire +3 more sources
A random telegraph signal of Mittag-Leffler type [PDF]
A general method is presented to explicitly compute autocovariance functions for non-Poisson dichotomous noise based on renewal theory. The method is specialized to a random telegraph signal of Mittag-Leffler type. Analytical predictions are compared to Monte Carlo simulations.
FERRARO S +3 more
openaire +3 more sources
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device.
Nikolaos Vasileiadis +4 more
doaj +1 more source
Random telegraph signals in charge coupled devices [PDF]
An investigation of fluctuating pixels resulting from proton irradiation of an E2V Technologies CCD47-20 device is presented. The device structure, experimental set up and irradiation methodology are described, followed by a detailed analysis of radiation induced random telegraph signals, RTS.
Smith, DR, Holland, AD, Hutchinson, IB
openaire +2 more sources
The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated.
Calvin Yi-Ping Chao +8 more
doaj +1 more source
Random Telegraph Signals in Proton Irradiated CCDs and APS
Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type.
Hopkinson, Gordon R. +2 more
openaire +3 more sources
Noise Reduction Methods for Charge Stability Diagrams of Double Quantum Dots
Operating semiconductor quantum dots as quantum bits requires isolating single electrons by adjusting gate voltages. The transitions of electrons to and from the dots appear as a honeycomb-like pattern in recorded charge stability diagrams (CSDs).
Sarah Fleitmann +6 more
doaj +1 more source
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs [PDF]
The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a technology independent approach to accurately characterize the bias dependent statistical RTS properties and show that these can fully describe the steep IV -dependency in avalanche.
Vishal Agarwal +5 more
openaire +2 more sources
Individuality of Dopants in Silicon Nano-pn Junctions
The reduced dimensionality of present electronic devices brings along changes in the dopant distribution in the device channel, in which only a small number of dopants exist.
Daniel MORARU +7 more
doaj +1 more source

