Results 41 to 50 of about 946 (248)

CMOS Image Sensor Random Telegraph Noise Time Constant Extraction From Correlated To Uncorrelated Double Sampling

open access: yesIEEE Journal of the Electron Devices Society, 2017
A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao   +5 more
doaj   +1 more source

Microstructure‐Controlled Crack Propagation and Fracture Resistance in MoSiBTiC Alloy Revealed by Multiscale Extended Finite Element Method Modeling

open access: yesAdvanced Engineering Materials, EarlyView.
A two‐dimensional multiscale finite element analysis framework was established for the first‐generation MoSiBTiC alloy, and the mechanical and fracture‐related parameters of the constituent phases were calibrated through experiments and simulations. The framework provides a basis for analyzing crack propagation behavior in its complex microstructure ...
Junfeng Du   +4 more
wiley   +1 more source

Slip Localization Intensification Mediated by Grain Boundary Sliding in a Polycrystalline Nickel‐Based Superalloy

open access: yesAdvanced Engineering Materials, EarlyView.
The temperature dependence of fatigue behavior in nickel‐based superalloys is investigated through high‐resolution measurements of plastic localization. While increasing temperature reduces localization and enhances fatigue performance in René 88DT, Inconel 718 exhibits a sharp degradation at intermediate temperature due to intensified slip ...
M. Calvat   +5 more
wiley   +1 more source

Fatigue Crack Initiation and Growth in Nanocrystalline Ni at Multiple Length‐Scales

open access: yesAdvanced Engineering Materials, EarlyView.
Overview of miniaturized in situ SEM fatigue setup and resultant fatigue crack growth data for nanocrystalline Ni. The presented study focuses on the analysis of fatigue crack growth rate (FCGR) in focused ion beam‐notched microcantilevers prepared from nanocrystalline (NC) Ni as a model material.
Igor Moravcik   +7 more
wiley   +1 more source

Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation

open access: yesIEEE Journal of the Electron Devices Society, 2016
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch timing
Azrif B. Manut   +8 more
doaj   +1 more source

On the Probability Distribution of a Filtered Random Telegraph Signal

open access: yesThe Annals of Mathematical Statistics, 1968
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire   +3 more sources

Current Status and Challenges in Data Collection for Aerospace Coatings Deposited by Plasma Spraying

open access: yesAdvanced Engineering Materials, EarlyView.
An innovative approach has been integrated into the GRENAT project to optimize plasma spraying and coating performance. Raw materials are accelerated and melted in the plasma generated by torches, creating coatings. Monitoring sensors collect process data which are combined with ex situ characterization data.
Lila Randriamananjara   +8 more
wiley   +1 more source

Investigating the truncated fractional telegraph equation in engineering: Solitary wave solutions, chaotic and sensitivity analysis

open access: yesResults in Engineering
Communication systems, especially radio frequency and microwave systems are significant to global society. Optimizing these systems involves using the telegraph equation to determine power and signal losses.
Usman Younas   +5 more
doaj   +1 more source

Human Breast Cancer Cells Demonstrate Electrical Excitability

open access: yesFrontiers in Neuroscience, 2020
Breast cancer is one of the most prevalent types of cancers worldwide and yet, its pathophysiology is poorly understood. Single-cell electrophysiological studies have provided evidence that membrane depolarization is implicated in the proliferation and ...
Mafalda Ribeiro   +7 more
doaj   +1 more source

Random telegraph-signal noise in junctionless transistors

open access: yesApplied Physics Letters, 2011
Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed.
Nazarov, Alexei N.   +5 more
openaire   +2 more sources

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