Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc +4 more
core +3 more sources
Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M. +3 more
core +5 more sources
Dark Current Random Telegraph Signals in Solid-State Image Sensors [PDF]
This paper focuses on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DCRTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces.
Bardoux, Alain +9 more
core +6 more sources
Activation Energy of RTS Noise [PDF]
Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was analyzed in order to obtain new ...
J. Pavelka +3 more
doaj +2 more sources
Noise Suppression in Organic Photodiodes: A Comprehensive Review of Mechanistic Insights and Design Principles. [PDF]
Organic photodiodes are limited by dark current and excess low‐frequency noise. This review synthesizes mechanisms of noise, links to three leakage pathways, and unifies measurement practice with device design. By outlining energetics, morphology, and interface strategies, it provides validated routes to lower noise floors and higher detectivity across
Lee GM, Kim TH, Kim Y, Shim JW.
europepmc +2 more sources
Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors [PDF]
This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved.
C. Durnez +5 more
semanticscholar +3 more sources
Visualisation Techniques for Random Telegraph Signals in MOSFETs [PDF]
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced.
Hoekstra, Erik +4 more
core +11 more sources
Anomalous Random Telegraph Signal in Suspended Graphene with Oxygen Adsorption: Implications for Gas Sensing [PDF]
Graphene is a promising material for sensing applications because of its large specific surface area and low noise. In many applications, graphene will inevitably be in contact with oxygen since it is the second most abundant gas in the atmosphere ...
Alexandro de Moraes Nogueira +4 more
semanticscholar +1 more source
Characterization of dark current signal measurements of the ACCDs used on board the Aeolus satellite [PDF]
Even just shortly after the successful launch of the European Space Agency satellite Aeolus in August 2018, it turned out that dark current signal anomalies of single pixels (so-called “hot pixels”) on the accumulation charge-coupled devices (ACCDs) of ...
F. Weiler +9 more
doaj +1 more source
Single-photon avalanche diodes (SPADs) are widely used for weak light detection due to their high gain and high sensitivity. Unfortunately, SPAD devices have random telegraph signal (RTS) noise during the avalanche transition phase, which makes circuit ...
Jian Yang +5 more
doaj +1 more source

