Results 11 to 20 of about 277 (105)

In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]

, 2012
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent, Magnan, Pierre, Martin-Gonthier, Philippe   +2 more
core   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology [PDF]

, 2009
A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18um ...
Goiffon, Vincent, Rolland, Guy, Saint-Pé, Olivier, Hopkinson, Gordon R., Magnan, Pierre, Bernard, Frédéric   +5 more
core   +1 more source

RTS noise impact in CMOS image sensors readout circuit [PDF]

, 2009
CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
P. Magnan, P. Martin-Gonthier, Magnan, Pierre, Martin-Gonthier, Philippe   +3 more
core   +1 more source

Random Telegraph Signal Phenomena in Ultra Shallow p⁺n Silicon Avalanche Diodes

IEEE Journal of the Electron Devices Society, 2018
An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the ...
Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta   +5 more
doaj   +1 more source

Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]

, 2011
This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Philippe Martin-Gonthier, Magnan, Pierre, Pierre Magnan, Martin-Gonthier, Philippe   +3 more
core   +1 more source

RTS Noise and Dark Current White Defects Reduction Using Selective Averaging Based on a Multi-Aperture System

Sensors, 2014
In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white ...
Bo Zhang, Keiichiro Kagawa, Taishi Takasawa, Min Woong Seo, Keita Yasutomi, Shoji Kawahito   +5 more
doaj   +1 more source

Human Breast Cancer Cells Demonstrate Electrical Excitability

Frontiers in Neuroscience, 2020
Breast cancer is one of the most prevalent types of cancers worldwide and yet, its pathophysiology is poorly understood. Single-cell electrophysiological studies have provided evidence that membrane depolarization is implicated in the proliferation and ...
Mafalda Ribeiro, Aya Elghajiji, Aya Elghajiji, Scott P. Fraser, Zoë D. Burke, David Tosh, Mustafa B. A. Djamgoz, Paulo R. F. Rocha   +7 more
doaj   +1 more source

Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]

, 2010
Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan, P. Martin-Gonthier, E. Havard, Havard, E., Magnan, Pierre, Martin-Gonthier, Philippe   +5 more
core   +1 more source

Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing

IEEE Journal of the Electron Devices Society, 2018
In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface.
Kapil Jainwal, Mukul Sarkar, Kushal Shah
doaj   +1 more source