Results 101 to 110 of about 156,728 (358)
Low-Damage Reactive Ion Etching of Nanoplasmonic Waveguides with Ultrathin Noble Metal Films
Nanoplasmonic waveguides utilizing surface plasmon polaritons (SPPs) propagation have been investigated for more than 15 years and are now well understood.
Alina A. Dobronosova+14 more
doaj +1 more source
Micromachining of buried micro channels in silicon [PDF]
A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper.
Berenschot, J.W. (Erwin)+7 more
core +3 more sources
Fluorine‐functionalized organic spacers (2F, 3F, 5F) are investigated to identify as optimal passivation agents for 3D MAPI perovskite solar cells (PSCs). The study highlights how altering fluorine positioning affects defect passivation, low‐dimensional phase (LDP) formation, and stability, emphasizing its role in molecular interactions and offering ...
Ali Semerci+15 more
wiley +1 more source
Er-doped aluminium oxide waveguide amplifiers [PDF]
Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3 ...
Pollnau, M.
core +1 more source
Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
We adopted the simple top-down etching to fabricate site- and dimension-controlled InGaN quantum dots. Each quantum dot is disk shaped and embedded in a nanoscale pillar.
L. Lee, P. Ku
semanticscholar +1 more source
This study examines the surface characteristics of AlInP (001), crucial for advanced solar cells and photoelectrochemical devices. Using theoretical modeling and experiments, it identifies how phosphorus‐rich and indium‐rich surfaces create mid‐gap states that pin the Fermi level and influence ultrafast electron dynamics.
Mohammad Amin Zare Pour+11 more
wiley +1 more source
Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application [PDF]
Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investigated as a function of the ratio of the O2 flow rate to total gas flow rate under different etching conditions such as the effect of power density ...
Hamidon, Mohd Nizar+1 more
core
Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan+11 more
wiley +1 more source
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu+3 more
wiley +1 more source
Geometric multi‐bit patterning based on dynamic wetting and dewetting phenomena creates roulette‐like Physical Unclonable Function (PUF) labels with stochastic yet deterministic properties. This method leverages the solutal‐Marangoni effect for high randomness while achieving deterministic multinary patterns through polygonal confinement of binary ...
Yeongin Cho+8 more
wiley +1 more source