Results 81 to 90 of about 71,691 (287)

RF reactor with asymmetrical electrodes for reactive ion etching of semiconductors [PDF]

Технологія та конструювання в електронній апаратурі, 2011
Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen).
S. V. Dudin, V. А. Lisovskiy, A. N. Dahov, V. M. Pletniov   +3 more
doaj   +1 more source

InP nanocrystals on silicon for optoelectronic applications

, 2012
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred, Liedke, Maciej Oskar, Mücklich, Arndt, Ou, Xin, Prucnal, Slawomir, Pyszniak, Krzysztof, Reuther, Helfried, Skorupa, Wolfgang, Turek, Marcin, Zhou, Shengqiang, Zuk, Jerzy   +10 more
core   +1 more source

Through Diamond Robust Surface Enhanced Raman Spectroscopy

Advanced Functional Materials, EarlyView.
Thin film diamond growth offers a unique opportunity for Surface Enhanced Raman Spectroscopy (SERS); the encapsulation of plasmonic nanostructures within a transparent, chemically stable, and physically robust coating. The diamond acts as both a window and protective layer, enabling illumination of the plasmonic nanostructures through the diamond ...
Kieran N. Twaddle, Rebecca J. Watkins, Ralph J. Moors, Massimiliano L.A. Ramsay, Richard B. Jackman   +4 more
wiley   +1 more source

Low-pressure plasma-etching of bulk polymer materials using gas mixture of CF4 and O2

AIP Advances, 2013
In this study, we have proposed a low-pressure reactive ion etching of bulk polymer materials with a gas mixture of CF4 and O2, and have achieved precise fabrication of poly(methyl methacrylate) (PMMA) and perfluoroalkoxy (PFA) bulk polymer plates with ...
Hirofumi Nabesawa, Takaharu Hiruma, Takeshi Hitobo, Suguru Wakabayashi, Toyohisa Asaji, Takashi Abe, Minoru Seki   +6 more
doaj   +1 more source

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

Advanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles, Alianna Maguire, Thomas Butruille, Jet Lem, Shuo Yang, Pedro Guerra Demingos, Sahar Choukir, Michel Haché, Boran Kumral, Katherine Jia, Charles Jia, Yu Zou, Chandra Veer Singh, Carlos M. Portela, Jun Lou, Pulickel M. Ajayan, Tobin Filleter   +16 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Crystal structure induced residue formation on 4H-SiC by reactive ion etching

AIP Advances, 2016
The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching
Yi-hong Liu, Yu-jun Sun, Gao-jie Zhao, Li-ming Liao, Tao Wang, Zhi-zhan Chen   +5 more
doaj   +1 more source

Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]

, 2013
Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S., Kumar, Ashutosh, Latzel, Michael, Singh, R., Tessarek, C.   +4 more
core  

From Wafers to Electrodes: Transferring Automatic Optical Inspection (AOI) for Multiscale Characterization of Smart Battery Manufacturing

Advanced Functional Materials, EarlyView.
Automat optical inspection (AOI) techniques in semiconductor fabrication can be leveraged in battery manufacturing, enabling scalable detection and analysis of electrode‐ and cell‐level imperfections through AI‐driven analytics and a digital‐twin framework.
Jianyu Li, Ertao Hu, Wei Wei, Feifei Shi
wiley   +1 more source