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Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication [PDF]

open access: yesMicromachines, 2021
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology ...
Michael Huff
doaj   +4 more sources

Editorial for the Special Issue on Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication [PDF]

open access: yesMicromachines, 2023
Reactive ion etching (RIE) is the dominating technology for micromachining semiconductors with a high aspect ratio (HAR) [...]
Lucia Romano, Konstantins Jefimovs
doaj   +2 more sources

Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE) [PDF]

open access: yesMicromachines, 2021
Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturisation in biomedical ...
Michael S. Gerlt   +4 more
doaj   +2 more sources

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching [PDF]

open access: yesMicromachines, 2020
The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images.
Zhitian Shi   +3 more
doaj   +2 more sources

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching [PDF]

open access: yesMicromachines, 2021
The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions,
Angela M. Baracu   +7 more
doaj   +2 more sources

Deep Reactive Ion Etching of Z-Cut Alpha Quartz for MEMS Resonant Devices Fabrication [PDF]

open access: yesMicromachines, 2020
Quartz is widely used in microelectromechanical systems (MEMS). Especially, MEMS quartz resonators are applied to sensors and serve as sensitive elements. The capability of deep etching is a limitation for the application.
Bo Li   +4 more
doaj   +2 more sources

Fabrication of Nanostructures on Surface of Micro-Lens Arrays Using Reactive Ion Etching [PDF]

open access: yesMicromachines
In this study, we fabricated a nanostructure on the surface of the micro-lens array (MLA), which is one of the light extraction technologies of organic light-emitting diodes (OLEDs), by performing the Reactive Ion -Etching (RIE) process. The MLA consists
Tae Jeong Hwang   +3 more
doaj   +2 more sources

Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process [PDF]

open access: yesScientific Reports
“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial.
Sekhar Chandra Ray, W. F. Pong
doaj   +2 more sources

Stochastic antireflection structures on silicon fabricated by reactive ion etching [PDF]

open access: yesEPJ Web of Conferences, 2023
Stochastic Si nanostructures for antireflection (AR) fabricated by reactive ion etching (RIE) are presented for use in different spectral ranges. The lithography-free fabrication enables its application on highly curved surfaces. ALD-coatings of Al2O3 of
Schmelz David   +2 more
doaj   +1 more source

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2022
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p ...
A. D. Yunik, A. H. Shydlouski
doaj   +1 more source

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