Results 31 to 40 of about 16,783 (158)

Atomic Depth Image Transfer of Large-Area Optical Quartz Materials Based on Pulsed Ion Beam

open access: yesMicromachines
The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry.
Shuyang Ran   +7 more
doaj   +1 more source

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

open access: yesAIP Advances, 2016
Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch ...
Chia-Pin Yeh   +3 more
doaj   +1 more source

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

open access: yesAIP Advances, 2017
We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada   +8 more
doaj   +1 more source

Diamond waveguides fabricated by reactive ion etching

open access: yesOptics Express, 2008
We demonstrate for the first time the feasibility of all-diamond integrated optic devices over large areas using a combination of photolithography, reactive ion etching (RIE) and focused ion beam (FIB) techniques. We confirm the viability of this scalable process by demonstrating guidance in a two-moded ridge waveguide in type 1b single crystal diamond.
Mark P, Hiscocks   +5 more
openaire   +2 more sources

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

open access: yesProceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz   +12 more
doaj   +1 more source

The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon

open access: yesJournal of Telecommunications and Information Technology, 2023
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperature ...
Małgorzata Kalisz   +3 more
doaj   +1 more source

Redeposition-Free Deep Etching in Small KY(WO4)2 Samples

open access: yesMicromachines, 2020
KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices.
Simen Mikalsen Martinussen   +3 more
doaj   +1 more source

A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars

open access: yesApplied Sciences, 2019
Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the ...
Amal Kabalan
doaj   +1 more source

Tailor-made nanostructures bridging chaos and order for highly efficient white organic light-emitting diodes

open access: yesNature Communications, 2019
For organic light-emitting diodes (OLEDs) to reach their potential for lighting applications, improved light out-coupling using industry-compatible methods are required.
Yungui Li   +11 more
doaj   +1 more source

Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

open access: yesMaterials Research Express, 2021
In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj   +1 more source

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