Results 51 to 60 of about 16,783 (158)

UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability. [PDF]

open access: yesNanomaterials (Basel), 2023
Dirdal CA   +8 more
europepmc   +1 more source

Effect of Reactive Ion Etching on the Luminescence of GeV Color Centers in CVD Diamond Nanocrystals. [PDF]

open access: yesNanomaterials (Basel), 2021
Grudinkin SA   +5 more
europepmc   +1 more source

Low-loss silicon nitride Kerr-microresonators fabricated with metallic etch masks via metal lift-off

open access: yesScientific Reports
Stoichiometric silicon nitride has emerged as a widely used integrated photonic material owing to its high index of refraction, nonlinear optical properties, and broad transparency window spanning visible to mid-IR frequencies.
Gabriel M. Colación   +3 more
doaj   +1 more source

New Colloidal Lithographic Nanopatterns Fabricated by Combining Pre-Heating and Reactive Ion Etching

open access: yesNanoscale Research Letters, 2009
We report a low-cost and simple method for fabrication of nonspherical colloidal lithographic nanopatterns with a long-range order by preheating and oxygen reactive ion etching of monolayer and double-layer polystyrene spheres.
Cong Chunxiao   +3 more
doaj   +1 more source

Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode. [PDF]

open access: yesSci Rep, 2021
Refino AD   +11 more
europepmc   +1 more source

High aspect ratio silicon ring-shape micropillars fabricated by deep reactive ion etching with sacrificial structures

open access: yesMicro and Nano Engineering
This paper presents the fabrication of widely-spaced high aspect ratio ring-shape pillars (i.e. hollow pillars). Lateral etching of the pillars during deep reactive ion etching is challenging.
Wenhan Hu, Zihao Wang, Aixi Pan, Bo Cui
doaj   +1 more source

Effect of Atomic Layer Etching on n-GaN MOS Capacitors

open access: yesIEEE Journal of the Electron Devices Society
Gallium nitride (GaN) with its high breakdown voltage and low specific on resistance is suitable for high voltage power electronic applications. Common dry etching processes such as reactive ion etching with an inductively coupled plasma (ICP-RIE ...
Sesha Gopal Selvakumar   +2 more
doaj   +1 more source

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