Results 71 to 80 of about 1,889,328 (287)
Crystal structure induced residue formation on 4H-SiC by reactive ion etching
The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching
Yi-hong Liu +5 more
doaj +1 more source
This review establishes structure‐property‐mechanism relationships across six modification strategies for V‐based oxide water‐splitting electrocatalysts: lattice engineering, heteroatom doping, interface engineering, carbon‐based hybridization, morphology engineering, and surface reconstruction and pre‐catalyst design, where dissolution is reframed as ...
Youness El Issmaeli +4 more
wiley +1 more source
A second look at reactive ion-beam etching and chemically-assisted ion-beam etching
S.3-10The excellent anisotropy of the Reactive Ion Beam Etching (RIBE) process, its fairly high etch rate and the perfectly smooth etched surface have made it a desirable tool for III-V electronic and optoelectronic device fabrication.
Eisele, K.M.
core +1 more source
Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding +14 more
wiley +1 more source
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source
Rubidium titanyl phosphate RbTiOPO4 (RTP) belongs to a highly diverse and versatile structural family and because of its large non-linear optical coefficients, wide transparency, high laser damage threshold, high chemical stability and low dielectric ...
Aguiló, M. +10 more
core +1 more source
The fabrication of semiconductor devices with three-dimensional architectures imposes unprecedented demands on advanced plasma dry etching processes. These include the simultaneous requirements of high throughput, high material selectivity, and precise ...
Shigeyuki Takagi +4 more
doaj +1 more source
Stencil assisted reactive ion etching for micro and nano patterning [PDF]
Stencil-assisted oxygen reactive ion etching is a low-cost and parallel process for the replication of micrometric and nanometric patterns in any organic material.
Lebraud, T. +5 more
core +1 more source
Development of reactive-ion etching for ZnO-based nanodevices [PDF]
We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is
Yi Luo +9 more
core +1 more source
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source

