Results 91 to 100 of about 16,783 (158)

Optimization Method for the Synergistic Control of DRIE Process Parameters on Sidewall Steepness and Aspect Ratio. [PDF]

Micromachines (Basel)
Wang D, Lei C, Ji P, Li Z, Yuan R, Yu J, Liang T, Yao Z, Li J.   +8 more
europepmc   +1 more source

The Effects of Electron-Beam-Radiation-Induced Damage on Single-Crystal Silicon Devices with SiO₂ Surface Passivation in a Nitrogen Atmosphere. [PDF]

Materials (Basel)
Yang Y, Lei Y, Li X, Bing W, Li H, Xiang Y, Peng S.   +6 more
europepmc   +1 more source

Frequency-angle decoupling design for grid-etched piezoelectric MEMS cantilevers and its application to quasi-static micromirrors. [PDF]

Microsyst Nanoeng
Xue W, Su Y, Qiao W, Liu Y, Yang Y, Zhao H, Zhang P, Shen G, Chen H, Wang Y, Wu Z, Wang L.   +11 more
europepmc   +1 more source

Advances in silicon carbide pressure sensors for high-temperature extreme environment sensing. [PDF]

Microsyst Nanoeng
Wu C, Fang X, Sun H, Zhang Z, Shi M, Liu Z, Fang Z, Yan Y, Kang Q, Maeda R, Tian B, Zhao L, Jiang Z.   +12 more
europepmc   +1 more source

Influence of activation mode and aeration rate on ferritization efficiency, phase formation, and sediment stability in spent etching solution treatment. [PDF]

Sci Rep
Kochetov G, Samchenko D, Trach Y, Lastivka O.   +3 more
europepmc   +1 more source

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Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
openaire   +1 more source

Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories

Integrated Ferroelectrics, 2004
The fabrication of the FeRAM requires the development of etching processes for ferroelectric thin films and electrodes as well as deposition processes. But different etching methods have different impacts such as resolution and process-induced damages. In this paper, reactive ion etching (RIE) and ion beam etching (IBE) for ferroelectric thin films and
TIAN-QI SHAO, TIAN-LING REN, LI-TIAN LIU, JUN ZHU, ZHI-JIAN LI   +4 more
openaire   +1 more source

Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
openaire   +1 more source

Reactive ion etching of LiNbO3

Applied Physics Letters, 1981
We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel, R. E. Howard, E. L. Hu, S. P. Lyman   +3 more
openaire   +1 more source