Results 111 to 120 of about 16,783 (158)

Classification of etching mechanism in reactive ion beam etch

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
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Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu, R. A. Ditizio, S. J. Fonash, O. O. Awadelkarim, J. Ruzyllo, R. W. Collins, H. J. Leary   +6 more
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The significance of reactive ions and reactive neutrals in ion-beam-assisted etching

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985
Using a custom designed beam analyzer system, the ionic species from a broad beam ion source have been measured under various etching conditions. In broad beam ion-beam-assisted etching (IBAE), it was observed that up to 25% of the ionic species are from the reactive neutral component backdiffusing into the ion source through the extraction grids ...
J. D. Chinn, E. D. Wolf
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Etch mechanism in the reactive ion etching of silicon nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991
Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
J. Dulak, B. J. Howard, Ch. Steinbrüchel   +2 more
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Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
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Deposition and reactive ion etching of molybdenum

Applied Physics Letters, 1983
The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula, J. C. Wolfe, James A. Oro, A. Ignatiev   +3 more
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Microloading effect in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
The etch rate of silicon, during reactive ion etching (RIE), depends on the total exposed area. This is called the loading effect. However, local variations in the pattern density will, in a similar way, cause local variations in the etch rate. This effect is caused by a local depletion of reactive species and is called the microloading effect. Silicon
C. Hedlund, H.-O. Blom, S. Berg
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Technology of reactive ion etching

1998
Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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