Results 121 to 130 of about 1,889,328 (287)
“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial.
Sekhar Chandra Ray, W. F. Pong
doaj +1 more source
This paper presents the fabrication of widely-spaced high aspect ratio ring-shape pillars (i.e. hollow pillars). Lateral etching of the pillars during deep reactive ion etching is challenging.
Wenhan Hu, Zihao Wang, Aixi Pan, Bo Cui
doaj +1 more source
Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang +11 more
wiley +1 more source
Effect of Atomic Layer Etching on n-GaN MOS Capacitors
Gallium nitride (GaN) with its high breakdown voltage and low specific on resistance is suitable for high voltage power electronic applications. Common dry etching processes such as reactive ion etching with an inductively coupled plasma (ICP-RIE ...
Sesha Gopal Selvakumar +2 more
doaj +1 more source
Polyphenol‐Inspired Materials for Agricultural Applications
This review outlines the use of polyphenol‐inspired materials for sustainable agriculture, highlighting their molecular design, interfacial assembly, structure–property relationships, and prospects toward precision agriculture, climate resilience, ecosystem protection, and circular bioeconomy strategies.
Haofu Liu +8 more
wiley +1 more source
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). [PDF]
Sombrio G +5 more
europepmc +1 more source
Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)
The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall
Piaopiao Gao +4 more
core +1 more source
Inorganic compound‐modified separators transform lithium–sulfur batteries from passive polysulfide confinement to active reaction‐pathway regulation. A Practical Relevance Index (PRI)‐guided framework bridges interfacial chemistry of inorganic separators with practical constraints, establishing unified design principles for scalable, high‐energy ...
Yuting Qin +7 more
wiley +1 more source
Annealing Behavior of Reactive Ion Etching Induced Deep Levels
The damage related levels, created by reactive ion etching, have been investigated using deep level transient spectroscopy. The devices used were: Au/n-Si Schottky diodes and p+-n diodes. The dominant deep level, in the surface region exposed during RIE,
Misra, D., Heasell, E. L.
core +1 more source
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu +15 more
wiley +1 more source

