Results 121 to 130 of about 1,889,328 (287)

Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process

open access: yesScientific Reports
“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial.
Sekhar Chandra Ray, W. F. Pong
doaj   +1 more source

High aspect ratio silicon ring-shape micropillars fabricated by deep reactive ion etching with sacrificial structures

open access: yesMicro and Nano Engineering
This paper presents the fabrication of widely-spaced high aspect ratio ring-shape pillars (i.e. hollow pillars). Lateral etching of the pillars during deep reactive ion etching is challenging.
Wenhan Hu, Zihao Wang, Aixi Pan, Bo Cui
doaj   +1 more source

Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene

open access: yesAdvanced Materials, EarlyView.
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang   +11 more
wiley   +1 more source

Effect of Atomic Layer Etching on n-GaN MOS Capacitors

open access: yesIEEE Journal of the Electron Devices Society
Gallium nitride (GaN) with its high breakdown voltage and low specific on resistance is suitable for high voltage power electronic applications. Common dry etching processes such as reactive ion etching with an inductively coupled plasma (ICP-RIE ...
Sesha Gopal Selvakumar   +2 more
doaj   +1 more source

Polyphenol‐Inspired Materials for Agricultural Applications

open access: yesAdvanced Materials, EarlyView.
This review outlines the use of polyphenol‐inspired materials for sustainable agriculture, highlighting their molecular design, interfacial assembly, structure–property relationships, and prospects toward precision agriculture, climate resilience, ecosystem protection, and circular bioeconomy strategies.
Haofu Liu   +8 more
wiley   +1 more source

Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)

open access: yes, 2019
The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall
Piaopiao Gao   +4 more
core   +1 more source

Review of Inorganic Separator Engineering for Next‐Generation Lithium–Sulfur Batteries: Compromise or Cornerstone?

open access: yesAdvanced Materials, EarlyView.
Inorganic compound‐modified separators transform lithium–sulfur batteries from passive polysulfide confinement to active reaction‐pathway regulation. A Practical Relevance Index (PRI)‐guided framework bridges interfacial chemistry of inorganic separators with practical constraints, establishing unified design principles for scalable, high‐energy ...
Yuting Qin   +7 more
wiley   +1 more source

Annealing Behavior of Reactive Ion Etching Induced Deep Levels

open access: yes, 1990
The damage related levels, created by reactive ion etching, have been investigated using deep level transient spectroscopy. The devices used were: Au/n-Si Schottky diodes and p+-n diodes. The dominant deep level, in the surface region exposed during RIE,
Misra, D., Heasell, E. L.
core   +1 more source

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

open access: yesAdvanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu   +15 more
wiley   +1 more source

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