Results 151 to 160 of about 590 (212)
Magnetically Boosted Water‐Splitting Performance in Metallic Glasses
Advanced Science, EarlyView.A strategy for boosting water electrolysis efficiency using ultralow magnetic fields on soft‐magnetic MG wires is reported. Ni40Fe40P20 metallic glass exhibits superior overall water‐splitting performance (1.51 V @ 1000 mA cm−2) at 100 Oe, enabled by spin polarization in periodic surface magnetic domains to enhance orbital hybridization and net spin ...
Chaoqun Pei +9 more
wiley +1 more source
Advanced Science, EarlyView.To stabilize high‐voltage Li||NCM811 batteries, we develop an in situ polymerized deep‐eutectic electrolyte (p‐DEPE) featuring competitive hydrogen‐bonding coordination. This design weakens Ni4+ adsorption, suppresses oxygen release, and enhances interfacial stability.
Yuxin Fan +6 more
wiley +1 more source
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Reactive ion etching and deep reactive ion etching processes
2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022YiHan WU, HaiLin He
exaly +2 more sources
Reactive Ion Etching and Ion Beam Etching for Ferroelectric Memories
Integrated Ferroelectrics, 2004The fabrication of the FeRAM requires the development of etching processes for ferroelectric thin films and electrodes as well as deposition processes. But different etching methods have different impacts such as resolution and process-induced damages. In this paper, reactive ion etching (RIE) and ion beam etching (IBE) for ferroelectric thin films and
TIAN-QI SHAO +4 more
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Reactive ion etching and plasma etching of tungsten
Microelectronic Engineering, 1993Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
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Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
openaire +1 more source
Reactive ion etching of silicon
Journal of Vacuum Science and Technology, 1979Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
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Reactive ion etching of LiNbO3
Applied Physics Letters, 1981We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel +3 more
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1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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Reactive ion etching of niobium
Journal of Vacuum Science and Technology, 1981The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
T. T. Foxe +4 more
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