Results 171 to 180 of about 590 (212)
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The significance of reactive ions and reactive neutrals in ion-beam-assisted etching
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985Using a custom designed beam analyzer system, the ionic species from a broad beam ion source have been measured under various etching conditions. In broad beam ion-beam-assisted etching (IBAE), it was observed that up to 25% of the ionic species are from the reactive neutral component backdiffusing into the ion source through the extraction grids ...
J. D. Chinn, E. D. Wolf
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Reactive Ion Etching Of Silicon Dioxide
SPIE Proceedings, 1987The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Technology of reactive ion etching
1998Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Deposition and reactive ion etching of molybdenum
Applied Physics Letters, 1983The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula +3 more
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Radial Etch Rate Nonuniformity in Reactive Ion Etching
Journal of The Electrochemical Society, 1984A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Lithography and Reactive Ion Etching in Microfabrication
1995The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
Materials, 2022Mariusz Sochacki +2 more
exaly
Reactive Ion Etching of Tantalum in Silicon Tetrachloride
SSRN Electronic Journal, 2022Asaad K. Edaan Al-mashaal +1 more
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