Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon
This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be ...
Marta Kluba+4 more
doaj +1 more source
UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability. [PDF]
Dirdal CA+8 more
europepmc +1 more source
Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures [PDF]
Axel Scherer+2 more
openalex +1 more source
Interfacial Interaction‐Mediated Regulation of Metal Oxidation States for Enhanced CO2 Reduction
A hybrid strategy is employed to optimize bismuth–oxygen interactions, precisely regulating interfacial bismuth–oxygen bonds during topochemical synthesis. This leads to vanadium oxynitride‐bismuth catalyst exhibiting high Faradaic efficiency and durability for formate production, attributed to enhanced reaction thermodynamics and kinetics.
Zhongyuan Ma+6 more
wiley +1 more source
Unraveling the Mechanism of Maskless Nanopatterning of Black Silicon by CF4/H2 Plasma Reactive-Ion Etching. [PDF]
Ghezzi F+8 more
europepmc +1 more source
Plasma Nanoscience: from Nano-Solids in Plasmas to Nano-Plasmas in Solids
The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed.
Meyyappan, M.+2 more
core +2 more sources
Effects of reactive ion etching on chemical vapor deposition [PDF]
C. Y. Wong, Philip E. Batson
openalex +1 more source
The PDEM‐based SIGPE provides a dynamic nanophase from Li+‐bridged molecular self‐association, enhancing electrochemical stability and facilitating uniform Li+ ion flux at the interface. This unique solvation structure results in a hetero species‐driven inorganic‐rich SEI and long‐term cycle stability, suggesting that a PFAS‐free Li+‐containing monomer
Susung Yun+5 more
wiley +1 more source
InP nanocrystals on silicon for optoelectronic applications
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred+10 more
core +1 more source
Comment on ‘‘Low-temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 5 2, 616 (1988)] [PDF]
Jacques Pelletier
openalex +1 more source