Results 181 to 190 of about 73,664 (313)

Switchable Thermal Mid‐IR Conducting Polymer Antenna Arrays

open access: yesAdvanced Functional Materials, EarlyView.
This study presents switchable mid‐infrared plasmonic resonances in PEDOT antenna arrays. Their optical extinction peaks can be reversibly switched ‘OFF’ and ‘ON’ by tuning the polaronic charge carrier concentration via the polymer's redox state, offering modulation of optical responses in the thermal mid‐infrared range including around 10 µm ...
Pravallika Bandaru   +5 more
wiley   +1 more source

Multipurpose Transparent Nanocomposites for Gamma Spectroscopy, Pulse Shape Discrimination, Thermal Neutron Detection, Radiation Shielding, and High Refractive Index Applications

open access: yesAdvanced Functional Materials, EarlyView.
Materials exist that are useful for gamma scintillation, radiation shielding, neutron‐gamma pulse shape discrimination (PSD), thermal neutron detection, or high refractive index applications. While certain materials have exhibited optimal performance for each of these applications, none achieve multiple functions.
Isabelle Winardi   +13 more
wiley   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

Fabrication of sharp silicon hollow microneedles by deep-reactive ion etching towards minimally invasive diagnostics. [PDF]

open access: yesMicrosyst Nanoeng, 2019
Li Y   +8 more
europepmc   +1 more source

Design of Reactive Ion Etching Process Based on ab-initio Calculation-The First Step-

open access: bronze, 2007
Shigeno Matsumoto   +8 more
openalex   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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