Results 181 to 190 of about 106,837 (225)
Some of the next articles are maybe not open access.
Microwave etching device for reactive ion etching
Materials Science and Engineering: A, 1991Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
openaire +2 more sources
Deep Reactive Ion Etching of Silicon
MRS Proceedings, 1998AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
Kuo-Shen Chen +5 more
openaire +2 more sources
Reactive Ion Etching Of Silicon Dioxide
SPIE Proceedings, 1987The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
openaire +2 more sources
Reactive Ion Etching of Polymer Films
International Polymer Processing, 1989Abstract The need for nanometer-sized features in integrated circuits calls for the use of dry-etching techniques using glow-discharge plasmas. The reactive ion etching (RIE) mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight-walled etched structures.
B. C. Dems +4 more
openaire +2 more sources
Microloading effect in reactive ion etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994The etch rate of silicon, during reactive ion etching (RIE), depends on the total exposed area. This is called the loading effect. However, local variations in the pattern density will, in a similar way, cause local variations in the etch rate. This effect is caused by a local depletion of reactive species and is called the microloading effect. Silicon
Hans-Olof Blom +2 more
openaire +2 more sources
Reactive Ion Etching of Silicon Dioxide
Journal of The Electrochemical Society, 1982The problem is explored of selectively etching SiO/sub 2/ over a silicon substrate by using a planar, dual plasma/reactive ion etching system with a 3000 W, 13.56 MHz rf power supply. Selective etching is achieved with CHF/sub 3/ at applied powers between 2500 and 3000 W by adjusting the chemistry of the plasma with the P/F ratio toward the onset of ...
F. C. See, R. W. Light
openaire +2 more sources
Lithography and Reactive Ion Etching in Microfabrication
1995The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
Peter Hudek, Ivo W. Rangelow
openaire +2 more sources
Reactive Ion Etching of Tantalum Pentoxide
Journal of The Electrochemical Society, 1983Etching experiments were performed using a parallel plate, RF reactive ion etching (RIE) system (ANELVA DEM-451M) with a 13.56 MHz RF power supply. The 250 mm diameter electrodes with cathode coupled configuration are separated by 89 mm. The wafers are mounted on the water-cooled cathode during etching.
Bunjiro Tsujiyama +2 more
openaire +2 more sources
Dimensionless parameters of reactive ion etching
Proceedings., 39th Electronic Components Conference, 2003The derivation and character of dimensionless parameters for the semiconductor manufacturing process of reactive ion etching (RIE) in generic form are discussed. Data from characterizations of a variety of films processed under a variety of etching regimes to establish the validity of derived parameters are presented. Fundamental realizations regarding
openaire +2 more sources
Selective Reactive Ion Etching of TiW
Journal of The Electrochemical Society, 1985TiW is used as a barrier to interdiffusion between aluminum or aluminum copper thin films (used as interconnections in integrated circuits) and silicon or PtSi contacts, thereby preventing junction short circuits. One method of defining VLSI interconnection patterns is by a lift-off technique.
G. C. Schwartz, P. M. Schaible
openaire +2 more sources