Results 181 to 190 of about 73,664 (313)
Switchable Thermal Mid‐IR Conducting Polymer Antenna Arrays
This study presents switchable mid‐infrared plasmonic resonances in PEDOT antenna arrays. Their optical extinction peaks can be reversibly switched ‘OFF’ and ‘ON’ by tuning the polaronic charge carrier concentration via the polymer's redox state, offering modulation of optical responses in the thermal mid‐infrared range including around 10 µm ...
Pravallika Bandaru +5 more
wiley +1 more source
Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3-O2 Reactive Ion Etching: The Effect of NO Surface Reaction. [PDF]
Tung NH +7 more
europepmc +1 more source
Reactive Ion Etching Selectivity of Si/SiO2: Comparing of two fluorocarbon gases CHF3 and CF4
Meiyue Zhang, Pat G. Watson
openalex +1 more source
Materials exist that are useful for gamma scintillation, radiation shielding, neutron‐gamma pulse shape discrimination (PSD), thermal neutron detection, or high refractive index applications. While certain materials have exhibited optimal performance for each of these applications, none achieve multiple functions.
Isabelle Winardi +13 more
wiley +1 more source
Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3-Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions. [PDF]
Ma HJ +8 more
europepmc +1 more source
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
Fabrication of sharp silicon hollow microneedles by deep-reactive ion etching towards minimally invasive diagnostics. [PDF]
Li Y +8 more
europepmc +1 more source
Design of Reactive Ion Etching Process Based on ab-initio Calculation-The First Step-
Shigeno Matsumoto +8 more
openalex +2 more sources
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

