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Role of ions in reactive ion etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994Energetic ion bombardment is responsible for the anisotropic etching which can be obtained in reactive ion etching. This has been recognized for many years but the detailed mechanisms involved in this process are still not well understood. In this paper, the various phenomena resulting from ion bombardment of a surface in a reactive gas glow discharge ...
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Reactive Ion Etching of Aluminum/Silicon
Journal of The Electrochemical Society, 1983High resolution, reproducible dry etching of Al/Si can be achieved using and mixtures in a hexagonal cathode reactive ion etching system. The etch directionality is a function of the composition, the number of wafers in the reactor, and the d‐c self‐bias voltage. Increases in the concentration of etching species produced by raising the percentage of in
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Morphologies and optical properties of black silicon by room temperature reactive ion etching
, 2020F. Atteia +6 more
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Precise patterning of organic semiconductors by reactive ion etching
, 2020M. Höppner +3 more
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Fabrication of Novel MEMS Microgrippers by Deep Reactive Ion Etching With Metal Hard Mask
Journal of microelectromechanical systems, 2017A. Bagolini +5 more
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Apparatus and method for reactive ion etching
2017The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of ...
Roozeboom, F. +5 more
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Reactive ion etching in microcircuit fabrication
Thin Solid Films, 1981G.C. Schwartz, P.M. Schaible
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