Results 221 to 230 of about 71,691 (287)

Tantalum Interconnect Metallization for Thin-Film Neural Interface Devices. [PDF]

Micromachines (Basel)
Abbott JR, Wu Y, Campanini ZM, Joshi-Imre A, Deku F, Cogan SF.   +5 more
europepmc   +1 more source

Beyond binary patterning: polypropylene carbonate as a versatile thermal resist for high-fidelity grayscale Nanofabrication. [PDF]

Microsyst Nanoeng
Li H, Li J, Jin Z, Ma H, Zhao S, Hu Z, Zhang M, Fu W, Wang J, Dai Y, Huang Y, Liu X, Wang Y.   +12 more
europepmc   +1 more source

SUBTRACTIVE NANOFLUIDICS IN 65-NM CMOS COPPER BEOL ACHIEVE 100-NM WIDTH. [PDF]

Proc IEEE Int Conf Micro Electro Mech Syst
Di A, Pedowitz M, Chien JC.
europepmc   +1 more source

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Reactive ion etching and plasma etching of tungsten

Microelectronic Engineering, 1993
Abstract Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6.
P. Verdonck, G. Brasseur, J. Swart
openaire   +1 more source

Reactive ion etching of silicon

Journal of Vacuum Science and Technology, 1979
Reactive ion etching of silicon substrates in a plasma containing chlorinated species does not result in undercut of a permanent mask. When the silicon is very highly doped it behaves as a different material and undercut has been observed. This phenomenon will be discussed.
G. C. Schwartz, P. M. Schaible
openaire   +1 more source

Reactive ion etching of LiNbO3

Applied Physics Letters, 1981
We describe the reactive ion etching of LiNbO3 in gas mixtures containing CCl2F2, CF4, O2, and Ar. The effects of gas composition and pressure, in the range 1–10-μm total pressure are discussed. Because it is possible to replicate fine features (∼2000 Å) with control of etch profiles, we expect the process to be used for three-dimensional patterning of
J. L. Jackel, R. E. Howard, E. L. Hu, S. P. Lyman   +3 more
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Reactive ion etching of niobium

Journal of Vacuum Science and Technology, 1981
The reactive gases CBrF3 and CF4 have both been found to be effective in the reactive ion etching of niobium. At relatively high pressures, 100 mTorr, rapid etching with a small degree of undercutting occurs at moderate rf power levels. At lower pressures, higher rf power levels, ≳1 W/ cm2, are required but vertical edge profiles result.
T. T. Foxe, B. D. Hunt, C. Rogers, A. W. Kleinsasser, R. A. Buhrman   +4 more
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Reactive Ion-Beam Etching

1984
Publisher Summary This chapter discusses reactive ion-beam etching (RIBE), which is the technique of removing material from a surface by impinging on it a beam of chemically reactive ions. In fact, RIBE has played a dual role in the evolution of dry-etching techniques for electronic device and integrated circuit applications. For as well as providing
B.A. HEATH, T.M. MAYER
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