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Reactive ion etching of diamond
Applied Physics Letters, 1989A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II-A ...
G. S. Sandhu, W. K. Chu
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Physics Today, 1986
Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Our ability to develop and build ever smaller microelectronic devices depends strongly on the capability to generate a desired device pattern in an image layer (photoresist) by lithography and then to transfer this pattern into the layers of materials of which the device consists.
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Microwave etching device for reactive ion etching
Materials Science and Engineering: A, 1991Abstract Electron cycloton resonance (ECR) plasmas are different from glow dischargeplasmas and introduce new complexities and possibilities. For dry etching processes (reactive ion etching), the operation in a low pressure regime and the high etch rates achievable at low ion energies,which can be controlled by an independently adjustable r.f.
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Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching
MRS Proceedings, 1997ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied ...
Jae-Won Lee +6 more
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MRS Proceedings, 1993
AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham +1 more
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1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
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Reactive ion etching for failure analysis applications
30th Annual Proceedings Reliability Physics 1992, 1992An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
Marsha T. Abramo +2 more
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Classification of etching mechanism in reactive ion beam etch
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu +6 more
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The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu +6 more
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Etch mechanism in the reactive ion etching of silicon nitride
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
J. Dulak +2 more
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