Results 251 to 260 of about 71,691 (287)

Sidewall Tapering in Reactive Ion Etching

Journal of The Electrochemical Society, 1985
On signale un phenomene de retrecissement suivant les parois laterales en gravure ionique reactive, avec une pente ∼75°. Une facette du masque de photoresist se forme a cause de la variation angulaire de la vitesse de perte de resist. L'angle de la facette avec le plan vertical est d'environ 16° et sa vitesse de propagation plus de deux fois la vitesse
openaire   +1 more source

Deep Reactive Ion Etching

2010
Laermer, Franz, Franssila, Sami, Sainiemi, Lauri, Kolari, Kai   +3 more
openaire   +6 more sources

Role of ions in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
Energetic ion bombardment is responsible for the anisotropic etching which can be obtained in reactive ion etching. This has been recognized for many years but the detailed mechanisms involved in this process are still not well understood. In this paper, the various phenomena resulting from ion bombardment of a surface in a reactive gas glow discharge ...
openaire   +1 more source

Reactive Ion Etching of Tantalum in Silicon Tetrachloride

SSRN Electronic Journal, 2022
Asaad K. Edaan Al-mashaal, Rebecca Cheung   +1 more
openaire   +1 more source

Influence of resists on reactive ion etching

Czechoslovak Journal of Physics, 1993
In the course of plasma etching we can observe a loading effect, i.e. the etch rate depends on the size of the etched surface exposed to the plasma. This phenomenon was explained according to Mogab by the plasma active etch species depletion via a rapid etch reaction.
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Reactive Ion Etching

1984
BERNARD GOROWITZ, RICHARD J. SAIA
openaire   +1 more source

Deep reactive ion etching as a tool for nanostructure fabrication

Journal of Vacuum Science & Technology B, 2009
Jikui Luo, Andrew Flewitt, Andrea C Ferrari   +2 more
exaly  

Reactive ion etching of silicon

Vacuum, 1980
openaire   +1 more source

Reactive Ion Etching (RIE)

2008
Sami Franssila, Lauri Sainiemi
openaire   +1 more source

Superhydrophobic silicon surfaces with micro–nano hierarchical structures via deep reactive ion etching and galvanic etching

Journal of Colloid and Interface Science, 2011
Yang He, WeiZheng Yuan
exaly