Results 241 to 250 of about 71,691 (287)

Deposition and reactive ion etching of molybdenum

Applied Physics Letters, 1983
The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula, J. C. Wolfe, James A. Oro, A. Ignatiev   +3 more
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Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
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Microloading effect in reactive ion etching

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
The etch rate of silicon, during reactive ion etching (RIE), depends on the total exposed area. This is called the loading effect. However, local variations in the pattern density will, in a similar way, cause local variations in the etch rate. This effect is caused by a local depletion of reactive species and is called the microloading effect. Silicon
C. Hedlund, H.-O. Blom, S. Berg
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Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Technology of reactive ion etching

1998
Abstract The original meaning of ‘etching’ is ‘to eat’; the process of removing something from an object. Moreover, it is impressive that another original meaning of it is ‘to feed’. In fact, reactive ion etching (RIE) consists of two processes; ‘to eat’ and ‘to feed’.
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Reactive ion etching for submicron structures

Journal of Vacuum Science and Technology, 1981
The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio   +3 more
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Deep reactive ion etching of PMMA

Applied Surface Science, 2004
Abstract The deep reactive ion etching of PMMA in O 2 , O 2 /CHF 3 discharges has been examined as a function of plasma parameters such as pressure, power and relative composition. It is demonstrated that the etching rate initially increases with pressure but decreases after 6.65 Pa.
Congchun Zhang, Chunsheng Yang, Duifu Ding   +2 more
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Reactant supply in reactive ion etching

Journal of Vacuum Science and Technology, 1979
In reactive ion etching, the etch rate may be reactant limited, so that a measurement of reactant supply is neccessary to understand the details of the etching process. A quantitative determination of reactant supply can be obtained by measuring the total dissociation of the etching gas.
John L. Mauer, Joseph S. Logan
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Lithography and Reactive Ion Etching in Microfabrication

1995
The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
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