Results 281 to 290 of about 73,664 (313)

Deep reactive ion etch conditioning recipe

SPIE Proceedings, 2004
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation.
Matthew Wasilik, Ning Chen
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Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
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Reactive Ion Etching Of Silicon Dioxide

SPIE Proceedings, 1987
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between ...
Peter C. Sukanek, Glynis Sullivan
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Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
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Reactive ion etching for submicron structures

Journal of Vacuum Science and Technology, 1981
The etch resistance of PMMA was measured under various reactive ion etching conditions and compared with that of silicon dioxide, silicon and Shipley AZ 1350 resist. The resulting profiles transferred into the substrates masked with PMMA were also studied under various reactive ion etching conditions.
J. D. Chinn, I. Adesida, E. D. Wolf, R. C. Tiberio   +3 more
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Reactive Ion Etching of Polymer Films

International Polymer Processing, 1989
Abstract The need for nanometer-sized features in integrated circuits calls for the use of dry-etching techniques using glow-discharge plasmas. The reactive ion etching (RIE) mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight-walled etched structures.
B. C. Dems, F. Rodriguez, C. M. Solbrig, Y.M.N. Namaste, S. K. Obendorf   +4 more
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Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu, R. A. Ditizio, S. J. Fonash, O. O. Awadelkarim, J. Ruzyllo, R. W. Collins, H. J. Leary   +6 more
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Reactive Ion Etching of Silicon Dioxide

Journal of The Electrochemical Society, 1982
The problem is explored of selectively etching SiO/sub 2/ over a silicon substrate by using a planar, dual plasma/reactive ion etching system with a 3000 W, 13.56 MHz rf power supply. Selective etching is achieved with CHF/sub 3/ at applied powers between 2500 and 3000 W by adjusting the chemistry of the plasma with the P/F ratio toward the onset of ...
R. W. Light, F. C. See
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Radial Etch Rate Nonuniformity in Reactive Ion Etching

Journal of The Electrochemical Society, 1984
A study was performed to determine some of the causes of the edge‐to‐center "bullseye" clearing pattern, in which the etch rate decreases monotonically from the wafer periphery to its center, observed when certain films are etched in a parallel‐plate reactive ion etching system.
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Reactive Ion Etching of Tantalum Pentoxide

Journal of The Electrochemical Society, 1983
Etching experiments were performed using a parallel plate, RF reactive ion etching (RIE) system (ANELVA DEM-451M) with a 13.56 MHz RF power supply. The 250 mm diameter electrodes with cathode coupled configuration are separated by 89 mm. The wafers are mounted on the water-cooled cathode during etching.
Shunji Seki, Takashi Unagami, Bunjiro Tsujiyama   +2 more
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