Results 281 to 290 of about 72,916 (314)

Reactive ion etching for VLSI

1980 International Electron Devices Meeting, 1980
The requirements of VLSI have lead to the development of etching techniques that are capable of transferring ever smaller dimension patterns into the various films that make up a ...
openaire   +1 more source

Reactive ion etching for failure analysis applications

30th Annual Proceedings Reliability Physics 1992, 1992
An attempt to develop and to optimize reactive ion etch processes for failure analysis applications is discussed. Reactive ion etching (RIE) provides several advantages over wet and plasma etching. Delayering of interlevel dielectric and passivation films with RIE results in anisotropic sidewalls.
Marsha T. Abramo, Erica B. Roy, Steven M. LeCours   +2 more
openaire   +1 more source

Kinetics of Reactive Ion Etching of Polymers in an Oxygen Plasma: The Importance of Direct Reactive Ion Etching

MRS Proceedings, 1993
AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching ...
Sandra W. Graham, Christoph SteinbrüChel   +1 more
openaire   +1 more source

Classification of etching mechanism in reactive ion beam etch

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1989
Etching characteristics for GaAs and InP using an ultrahigh vacuum reactive ion beam etching (UHV-RIBE) system have been classified. Using a horizontal electron cyclotron resonance (ECR) ion source, a uniform ion beam covering a large area is obtained, and etching at low pressure (≂10−5 Torr) has become possible.
T. Tadokoro, F. Koyama, Kenichi Iga
openaire   +1 more source

Damage to Si substrates during SiO2 etching: A comparison of reactive ion etching and magnetron-enhanced reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
The damage and contamination effects present in silicon substrates from both reactive ion etching and magnetron-enhanced reactive ion etching of SiO2 have been examined for various overetch percentages using spectroscopic ellipsometry (SE) and secondary ion mass spectroscopy (SIMS).
Tieer Gu, R. A. Ditizio, S. J. Fonash, O. O. Awadelkarim, J. Ruzyllo, R. W. Collins, H. J. Leary   +6 more
openaire   +1 more source

Etch mechanism in the reactive ion etching of silicon nitride

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991
Reactive ion etching of silicon nitride with CHF3/O2 plasmas has been studied in a hexode reactor and compared to silicon dioxide etching. Measurements of etch rates as a function of gas composition and pressure were combined with Langmuir probe data for the ion flux to the substrate to give etch yields (number of substrate atoms removed per bombarding
J. Dulak, B. J. Howard, Ch. Steinbrüchel   +2 more
openaire   +1 more source

Deposition and reactive ion etching of molybdenum

Applied Physics Letters, 1983
The stress in molybdenum films deposited by dc magnetron sputtering in neon has been characterized. Fabrication of 1-μ-thick films 2 cm in diameter on polyimide membranes has been achieved with low-stress material. A reactive ion etching process is described with 75-nm resolution and 15:1 aspect ratios.
Abdelhak Bensaoula, J. C. Wolfe, James A. Oro, A. Ignatiev   +3 more
openaire   +1 more source

Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
openaire   +1 more source

Patterning of Benzocyclobutene by Reactive Ion Etching

Journal of The Electrochemical Society, 1996
This work focuses on the fine-line patterning of benzocyclobutene (BCB), a silicon containing, thermoset polymer for potential application as an interlayer dielectric (ILD) in multilevel metallization. Etch rates for BCB have been determined in p asmas containing mixtures of O 2 and CF 4 .
Robert D. Tacito, Christoph Steinbrüchel   +1 more
openaire   +1 more source

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
openaire   +1 more source