Results 71 to 80 of about 73,664 (313)
Nature Communications, 2019 For organic light-emitting diodes (OLEDs) to reach their potential for lighting applications, improved light out-coupling using industry-compatible methods are required.
Yungui Li +11 more
doaj +1 more source
Materials Research Express, 2021 In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching (ICP RIE) system.
A Toprak, D Yılmaz, E Özbay
doaj +1 more source
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
core +4 more sources
Advanced Functional Materials, EarlyView.This work develops flexible zinc‐ion batteries (FZIBs) using a zincophilic/hydrophobic polymer (thermoplastic polycarbonate‐based polyurethane, TPCU) to protect Zn powder anodes and MXene/Silk (MXS) as flexible current collectors. The designed TPCU‐ZnP@MXS structure enables uniform Zn deposition, yielding dendrite‐free anodes with stable cycling ...
Zixuan Yang +8 more
wiley +1 more source
Anisotropic Etching of Graphite and Graphene in a Remote Hydrogen Plasma [PDF]
, 2017 We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two ...
Camenzind, Timothy N. +8 more
core +2 more sources
Advanced Functional Materials, EarlyView.A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon +8 more
wiley +1 more source
Ga^+ beam lithography for nanoscale silicon reactive ion etching [PDF]
, 2010 By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam ...
Chhim, B. +3 more
core +1 more source
Advanced Functional Materials, EarlyView.This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley +1 more source
Er-doped aluminium oxide waveguide amplifiers [PDF]
, 2008 Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3 ...
Pollnau, M.
core +1 more source
Faraday cage angled-etching of nanostructures in bulk dielectrics
, 2016 For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth.
Burek, Michael J. +3 more
core +1 more source