Results 81 to 90 of about 72,916 (314)
Advanced Functional Materials, EarlyView.This work develops flexible zinc‐ion batteries (FZIBs) using a zincophilic/hydrophobic polymer (thermoplastic polycarbonate‐based polyurethane, TPCU) to protect Zn powder anodes and MXene/Silk (MXS) as flexible current collectors. The designed TPCU‐ZnP@MXS structure enables uniform Zn deposition, yielding dendrite‐free anodes with stable cycling ...
Zixuan Yang +8 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Buckling‐resistant and trace‐stacked (BRATS) intracortical microelectrode arrays (MEAs) eliminate the need for insertion aid and complex surgical setup, resulting in minimal inflammatory tissue response, compared to conventional flexible MEAs inserted with aid. Trace stacking effectively doubled the channel count without increasing the MEA shank width,
May Yoon Pwint, Delin Shi, X. Tracy Cui
wiley +1 more source
Hydroxylated Ionic Liquids as Functional Additives for Stable Aqueous Zn Batteries
Advanced Functional Materials, EarlyView.A hydroxyl‐functionalized ionic liquid additive (HO‐EMImTfO) regulates Zn2+ solvation and electrodeposition by forming a stable ion‐diversion dam at the Zn interface. This design mitigates Zn pulverization, suppresses dendrite growth, and reduces side reactions, enabling Zn||Cu and Zn||V2O5 cells to achieve exceptional cycling stability and efficiency.
Qiang Yan +6 more
wiley +1 more source
Crystal structure induced residue formation on 4H-SiC by reactive ion etching
AIP Advances, 2016 The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching
Yi-hong Liu +5 more
doaj +1 more source
Dry etching of metallization [PDF]
The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in ...
Bollinger, D.
core +1 more source
Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [PDF]
, 2013 Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance.
Christiansen, S. +4 more
core
InP nanocrystals on silicon for optoelectronic applications
, 2012 One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred +10 more
core +1 more source
Advanced Functional Materials, EarlyView.This review describes the different surface engineering strategies for quantum dots that addresses the challenges associated with surface defects, highlighting their role in enhancing the performance of solar energy conversion technologies. Abstract Colloidal quantum dots (QDs) have garnered significant attention for their unique potential in clean ...
Kokilavani S., Gurpreet Singh Selopal
wiley +1 more source
Side Reaction Pathway Modulation for Hydrogen Evolution‐Free Aqueous Zn‐Ion Batteries
Advanced Functional Materials, EarlyView.A ZnO–TeO2–Te ternary composite layer with a unique rice grain‐like morphology is spontaneously formed on the Zn anode via telluric acid additive. This functional interphase effectively suppresses side reactions such as zinc hydroxide sulfate formation, hydrogen evolution, and Zn corrosion, enabling highly reversible and stable Zn metal cycling in ...
Young‐Hoon Lee +3 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon +8 more
wiley +1 more source