Results 191 to 200 of about 13,977 (254)

Formation, Transformation, and Synergistic Interplay of Crystalline Orientation in Conjugated Polymers via Solution‐State Aggregation Control

open access: yesAdvanced Science, EarlyView.
Molecular engineering (i.e., tuning donors) and three film processing strategies (i.e., drop‐casting from different solvents, thermal and solvent vapor annealing, and blending) were synergistically utilized to tailor the solution‐state aggregation and thus the formation, transformation, and interplay of solid‐state crystalline orientation (face‐on and ...
Hao Zheng   +9 more
wiley   +1 more source

NbN Broadband Plasmonic Absorbers for Efficient Hot‐Carrier Injection Toward Improved Solar‐to‐Hydrogen Conversion

open access: yesAdvanced Science, EarlyView.
Niobium nitride (NbN) broadband plasmonic metasurface absorbers provide an efficient platform for solar‐energy conversion through hot‐carrier injection. Quasi‐epitaxial NbN features a low work function of 4.0 eV, reducing the interfacial injection barrier and facilitating charge transfer into adjacent photocatalysts.
Tzu‐Yu Peng   +11 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

open access: yesAdvanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout   +19 more
wiley   +1 more source

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma   +11 more
wiley   +1 more source

Direct observation of coherent elastic antineutrino-nucleus scattering. [PDF]

open access: yesNature
Ackermann N   +17 more
europepmc   +1 more source

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