Results 171 to 180 of about 133,386 (262)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

Power Optimization of TENGs via Load Capacitance Sizing. [PDF]

open access: yesIEEE Sens J
Hosseini M   +5 more
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

open access: yesAdvanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad   +4 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

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