Results 261 to 270 of about 21,857 (278)

Molecular orientation studied by reflection anisotropy spectroscopy

physica status solidi (b), 2010
AbstractA description of the reflection anisotropy spectroscopy (RAS) results from oriented thin films is presented. The RAS signals of a 1 nm thick film are simulated to investigate the effect of molecular tilt on the RAS response of the system. Whilst the spectroscopic measurements themselves appear to be relatively insensitive to the effects of the ...
P. D. Lane, G. E. Isted, R. J. Cole
openaire   +1 more source

Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors

Journal of Non-Crystalline Solids, 1998
Abstract Photoinduced anisotropy (PA) in films and bulk samples of chalcogenide glasses As2S3, As50Se50 and Ge20As20S60 has been studied in a wide spectral range (1.5 to 5.5 eV) using reflectance difference spectroscopy (RDS). PA was observed in the energy range much exceeding the energy of inducing photons and also in the range 4.5–5.5 eV energies ...
V Lyubin, A.V Kolobov, T Yasuda, M Klebanov, L Boehm, K Tanaka   +5 more
openaire   +1 more source

Reflectance anisotropy of reconstructed GaAs(001) surfaces

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
We have performed ab initio pseudopotential calculations of three alternative structures of the GaAs(001) surface to examine the dependence of the reflectance anisotropy spectrum (RAS) upon the precise surface configuration. Spectra were calculated based upon a hypothetical (2×1) surface, a (2×4)-β surface using experimentally measured atom positions ...
S. J. Morris, J. M. Bass, C. C. Matthai, V. Milman, M. C. Payne   +4 more
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REFLECTANCE ANISOTROPY OF THE GaAs(001) SURFACE

Surface Review and Letters, 1994
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) surface and found the reflectance anisotropy (RA) to be extremely sensitive to the atomic configuration upon the surface. By performing a series of ab initio pseudopotential calculations of the optical response of the (2×4) surface reconstruction we find ...
S.J. MORRIS, J.M. BASS, D.I. WESTWOOD, D.A. WOOLF, C.C. MATTHAI, R.H. WILLIAMS, F. REINHARDT, J. RUMBERG, K.C. ROSE, W. RICHTER   +9 more
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Anisotropy anomalies of the reflectivity of Se

Solid State Communications, 1982
Abstract The reflectivity of trigonal Se based on the self-consistent Hartree-Fock-Slater calculation and the rigorous treatment of the matrix elements is presented for 0–25 eV. Close agreement with the experimental reflectivities is found. The peaks are interpreted in terms of the band triplets.
H.M. Isomäki, J. von Boehm
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Anisotropy in the optical reflectivity of NbSe2

Solid State Communications, 1971
Abstract The reflectivity off the face and off the edge of single crystal platelets of NbSe 2 was measured in the visible region (1.55 – 3.10 eV) using both unpolarized and linearly polarized light. A hump observed at 1.95 eV with unpolarized light is resolved into two peaks (1.88 eV and 2.03 eV) by means of polarized light with E ⊥ c .
F. Consadori, R.F. Frindt
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Reflectance anisotropy of the (110) reconstructed surface of gold

Physical Review B, 1990
Les calculs d'anisotropie utilisent une theorie perturbative des champs electromagnetiques pres de l'interface microrugueuse. La dispersion spatiale est prise en compte en appliquant une extension de la methode de Rayleigh aux systemes rugueux non locaux.
, Wang, , Mochán, , Barrera
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Reflection Anisotropy of 6328 A Laser Mirrors

Japanese Journal of Applied Physics, 1979
The reflection anisotropy of 6328 A laser mirrors is investigated using an internal mirror 6328 A He–Ne laser with a fused-silica plate inside the cavity. Experimental and theoretical studies are made of: 1) the dependence of the mode polarization of the laser on the mirror orientation about the axis of the discharge tube; 2) the dependence of the mode
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Reflectivity and reflectance anisotropy of Si(100): a polarisable bond model

Surface Science, 1997
Abstract The reflectivity and reflectance anisotropy (RA) of the unreconstructed Si(100) surface are calculated using a model in which the semiconductor is a slab of polarisable bonds interacting by induced dipolar fields. Parameters for the calculations are obtained from ab initio calculations.
D. Herrendörfer, C.H. Patterson
openaire   +1 more source

Reflection anisotropy spectroscopy of the oxidized diamond (001) surface

Journal of Physics: Condensed Matter, 2009
We report reflection anisotropy spectroscopy (RAS) measurements of the oxidized (001) surface of a type IIb natural diamond. These measurements were made possible due to recent developments in diamond surface preparation. We compare RAS results from the hydrogenated, clean and oxidized C(001) surface and demonstrate that RAS is sensitive to the ...
M, Schwitters, D S, Martin, P, Unsworth, T, Farrell, J E, Butler, P, Weightman   +5 more
openaire   +2 more sources