Review: An Optical Surface Probe by Reflectance Anisotropy Spectroscopy
Hittite Journal of Science and Engineering, 2019 Rface and interface information. RAS measures the difference in reflectance of light eflectance anisotropy spectroscopy RAS is an optical technique to produce surlinearly polarised along two orthogonal axes in the surface at near normal incidence as ...
Orhan Zeybek
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Chiral Porphyrin Assemblies Investigated by a Modified Reflectance Anisotropy Spectroscopy Spectrometer [PDF]
Molecules, 2023 Reflectance anisotropy spectroscopy (RAS) has been largely used to investigate organic compounds: Langmuir–Blodgett and Langmuir–Schaeffer layers, the organic molecular beam epitaxy growth in situ and in real time, thin and ultrathin organic films ...
Ilaria Tomei +10 more
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In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy [PDF]
NanomaterialsThe surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring ...
Yufeng Huang +6 more
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Reflectance anisotropy spectroscopy on the Ge(113) surface
Surface Science, 1996 The clean and hydrogenated Ge(113) surface was investigated using reflectance anisotropy spectrosopy (RAS). Surface-induced optical transitions related to the 3 × 2 reconstruction of the clean surface were identified.
K Jacobi, J -T Zettler
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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [PDF]
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
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Reflectance anisotropy spectroscopy of magnetite (110) surfaces [PDF]
Physical Review B, 2014 Reflectance anisotropy spectroscopy (RAS) has been used to measure the optical anisotropies of bulk and thin-film Fe3O4(110) surfaces. The spectra indicate that small shifts in energy of the optical transitions, associated with anisotropic strain or ...
SHVETS, IGOR +5 more
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Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment [PDF]
Beilstein Journal of Nanotechnology, 2016 Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better
Ann-Kathrin Kleinschmidt +7 more
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Sensing Strain-induced Symmetry Breaking by Reflectance Anisotropy Spectroscopy [PDF]
Applied Physics Letters, 2021 Intentional breaking of the lattice symmetry in solids is a key concept to alter the properties of materials by modifying their electronic band structure.
S. Beck (12851088) +5 more
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The application of reflectance anisotropy spectroscopy to organics deposition
Organic Electronics, 2004 Reflectance anisotropy spectroscopy (RAS) has been recently used to investigate organic compounds, similarly to what has been already done in the case of inorganic semiconductors and metals.
Goletti, C +8 more
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Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys [PDF]
Applied Physics Letters, 2022 In this paper, we present results obtained by an optical technique, namely, reflectance anisotropy spectroscopy (RAS), applied to a series of GaAs1-xBix samples grown by molecular beam epitaxy (MBE) under different strain conditions with the increasing ...
Goletti C. +5 more
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