Results 21 to 30 of about 2,982 (265)
Reflectance anisotropy spectroscopy study of GaAs overlayer growth
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of GaAs onto sub to one monolayer coverages of Si δ layers deposited on the GaAs(001)‐c(4×4) surface.
D. I. Westwood +5 more
core +2 more sources
Over the last two decades, advancements in airborne imaging spectroscopy have prompted the exploitation of lightweight drones for detailed vegetation assessment at unprecedented resolutions.
Erika Piaser +9 more
doaj +1 more source
Optical Anisotropy of Porphyrin Nanocrystals Modified by the Electrochemical Dissolution
Reflectance anisotropy spectroscopy (RAS) coupled to an electrochemical cell represents a powerful tool to correlate changes in the surface optical anisotropy to changes in the electrochemical currents related to electrochemical reactions.
Rossella Yivlialin +6 more
doaj +1 more source
Structure and Physical Properties of the LaBiFe2O6 Perovskite Produced by the Modified Pechini Method [PDF]
In this paper the synthesis of the LaBiFe2O6 material by the modified Pechini method is reported. Structural, morphologic, magnetic and optic experimental studies were performed.
Johny Andrés Jaramillo Palacio +5 more
doaj +2 more sources
Thin organic films are widely used in sensors, solar cells, and optical devices due to their intense absorption in the visible/near-infrared (IR) region.
Marta Penconi +7 more
doaj +1 more source
A research product for tropospheric NO2 columns from Geostationary Environment Monitoring Spectrometer based on Peking University OMI NO2 algorithm [PDF]
Tropospheric vertical column densities (VCDs) of nitrogen dioxide (NO2) retrieved from sun-synchronous satellite instruments have provided abundant NO2 data for environmental studies, but such data are limited by retrieval uncertainties and insufficient ...
Y. Zhang +29 more
doaj +1 more source
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors.
Henning Fouckhardt +3 more
doaj +1 more source
Optical resonances of indium islands on GaAs(001) observed by reflectance anisotropy spectroscopy
The optical properties of indium islands on GaAs(001) surfaces have been studied by reflectance anisotropy spectroscopy as a function of metal coverage.
Schintke, Silvia +5 more
core +2 more sources
AbstractElectrode/electrolyte interfaces play a crucial role in many electrochemical energy conversion and storage technologies. Hence, a deep understanding of the interfacial structure, energetic alignment and processes is of high relevance and has triggered the development of a number of in situ and operando techniques.
Margot Guidat +4 more
openaire +4 more sources
Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are used ...
Emerson Oliveira +3 more
doaj +1 more source

