Results 1 to 10 of about 377 (127)

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment [PDF]

Beilstein Journal of Nanotechnology, 2016
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better
Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski   +7 more
doaj   +7 more sources

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [PDF]

Micromachines, 2021
Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, Henning Fouckhardt   +5 more
doaj   +10 more sources

Chiral Porphyrin Assemblies Investigated by a Modified Reflectance Anisotropy Spectroscopy Spectrometer [PDF]

Molecules, 2023
Reflectance anisotropy spectroscopy (RAS) has been largely used to investigate organic compounds: Langmuir–Blodgett and Langmuir–Schaeffer layers, the organic molecular beam epitaxy growth in situ and in real time, thin and ultrathin organic films ...
Ilaria Tomei, Beatrice Bonanni, Anna Sgarlata, Massimo Fanfoni, Roberto Martini, Ilaria Di Filippo, Gabriele Magna, Manuela Stefanelli, Donato Monti, Roberto Paolesse, Claudio Goletti   +10 more
doaj   +6 more sources

In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application [PDF]

AIP Advances, 2019
A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (RIE ...
Christoph Doering, Johannes Strassner, Henning Fouckhardt   +2 more
doaj   +5 more sources

In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors

Advances in Materials Science and Engineering, 2023
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors.
Henning Fouckhardt, Johannes Richter, Christoph Doering, Johannes Strassner   +3 more
doaj   +3 more sources

In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe₂ Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy [PDF]

Nanomaterials
The surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring ...
Yufeng Huang, Mengjiao Li, Zhixin Hu, Chunguang Hu, Wanfu Shen, Yanning Li, Lidong Sun   +6 more
doaj   +3 more sources

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA)

Advances in Materials Science and Engineering, 2022
Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are used ...
Emerson Oliveira, Johannes Strassner, Christoph Doering, Henning Fouckhardt   +3 more
doaj   +3 more sources

Optical Anisotropy of Porphyrin Nanocrystals Modified by the Electrochemical Dissolution [PDF]

Molecules, 2022
Reflectance anisotropy spectroscopy (RAS) coupled to an electrochemical cell represents a powerful tool to correlate changes in the surface optical anisotropy to changes in the electrochemical currents related to electrochemical reactions.
Rossella Yivlialin, Claudia Filoni, Francesco Goto, Alberto Calloni, Lamberto Duò, Franco Ciccacci, Gianlorenzo Bussetti   +6 more
doaj   +2 more sources

In Situ Optical Monitoring and Morphological Evolution of Si Nanowires Grown on Faceted Al₂O₃(0001) Substrates [PDF]

Nanomaterials
This paper presents the growth and in situ optical characterization of silicon nanowires (Si NWs) on Al2O3(0001) substrates that are thermally faceted using the atomic low angle shadowing technique (ATLAS) method. Annealing Al2O3 substrates in air before
Olzat Toktarbaiuly, Mergen Zhazitov, Muhammad Abdullah, Yerbolat Tezekbay, Nazerke Kydyrbay, Nurxat Nuraje, Tolagay Duisebayev   +6 more
doaj   +2 more sources

Optical anisotropy of pristine and reduced V2O5(010) [PDF]

Scientific Reports
The optical anisotropy of pristine and reduced single crystalline (010) orientated $$\hbox {V}_{2}\hbox {O}_{5}$$ is presented. The reduction of $$\hbox {V}_{2}\hbox {O}_{5}$$ is complex due to the abundance of V-O phases, strong dependence on the ...
Brian Walls, Oisín Murtagh, Chris M. Smith, Daragh Mullarkey, Dmitry Shulyatev, Karsten Fleischer, Ainur Zhussupbekova, Igor V. Shvets   +7 more
doaj   +2 more sources