Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [PDF]
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
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Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment [PDF]
Beilstein Journal of Nanotechnology, 2016 Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better
Ann-Kathrin Kleinschmidt +7 more
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In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application [PDF]
AIP Advances, 2019 A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (RIE ...
Christoph Doering +2 more
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Advances in Materials Science and Engineering, 2023 Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors.
Henning Fouckhardt +3 more
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Optical Anisotropy of Porphyrin Nanocrystals Modified by the Electrochemical Dissolution [PDF]
Molecules, 2022 Reflectance anisotropy spectroscopy (RAS) coupled to an electrochemical cell represents a powerful tool to correlate changes in the surface optical anisotropy to changes in the electrochemical currents related to electrochemical reactions.
Rossella Yivlialin +6 more
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Review: An Optical Surface Probe by Reflectance Anisotropy Spectroscopy [PDF]
Hittite Journal of Science and Engineering, 2019 Rface and interface information. RAS measures the difference in reflectance of light eflectance anisotropy spectroscopy RAS is an optical technique to produce surlinearly polarised along two orthogonal axes in the surface at near normal incidence as ...
Orhan Zeybek
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Chiral Porphyrin Assemblies Investigated by a Modified Reflectance Anisotropy Spectroscopy Spectrometer [PDF]
Molecules, 2023 Reflectance anisotropy spectroscopy (RAS) has been largely used to investigate organic compounds: Langmuir–Blodgett and Langmuir–Schaeffer layers, the organic molecular beam epitaxy growth in situ and in real time, thin and ultrathin organic films ...
Ilaria Tomei +10 more
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Advances in Materials Science and Engineering, 2022 Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are used ...
Emerson Oliveira +3 more
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Proceedings, 2021 Thin organic films are widely used in sensors, solar cells, and optical devices due to their intense absorption in the visible/near-infrared (IR) region.
Marta Penconi +7 more
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