Results 231 to 240 of about 1,547,483 (263)

Polarizable dipole models for reflectance anisotropy spectroscopy: a review

Journal of Physics: Condensed Matter, 2004
We present a review of the formalism and application of polarizable dipole models that have been used to calculate reflectance anisotropy spectra of semiconductor and metal surfaces and thin organic films.
N Arzate, B S Mendoza, R A Vázquez-Nava
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Reflectance anisotropy spectroscopy study of GaAs overlayer growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of GaAs onto sub to one monolayer coverages of Si δ layers deposited on the GaAs(001)-c(4×4) surface. The low growth temperature (400 °C), required to avoid spreading of the dopant away from the δ plane, has meant that the study of a RAS feature related to ...
Z. Sobiesierski, D. I. Westwood, D. A. Woolf   +2 more
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Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Journal of Physics: Condensed Matter, 1998
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving the use of electron or ion beams under high- or ultra-high-vacuum conditions. Recently there have been major efforts to develop surface sensitive optical probes that have the inherent advantage that they can be applied in more challenging environments such
Z Sobiesierski, D I Westwood, C C Matthai   +2 more
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Reflection anisotropy spectroscopy: a new probe of metal surfaces

Surface and Interface Analysis, 2001
Abstract Reflection anisotropy spectroscopy (RAS) is a non‐destructive optical probe of surfaces capable of operation within a wide range of environments. The RAS technique was developed to study semiconductor growth and more recently has been used to probe the optical properties of metal surfaces.
D. S. Martin, P. Weightman
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REFLECTION ANISOTROPY SPECTROSCOPY: AN OPTICAL PROBE OF SURFACES AND INTERFACES

Surface Review and Letters, 2000
Reflection anisotropy spectroscopy (RAS) is a nondestructive surface-sensitive optical probe capable of operation within a wide range of environments. RAS has been applied to semiconductor surfaces and has found use as an in situ monitor of semiconductor growth.
D. S. MARTIN, P. WEIGHTMAN
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Reflection anisotropy spectroscopy of molecular assembly at metal surfaces

Thin Solid Films, 2004
Abstract Reflection anisotropy spectroscopy (RAS) is a non-destructive optical probe of surfaces capable of operation within ultra-high vacuum and liquid environments. The RAS technique has been used to investigate the behaviour of surface electronic states on clean metal surfaces including energy shifts, depopulation and quantum confinement. RAS has
D.S. Martin, P. Weightman
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Reflectance anisotropy spectroscopy of oriented films of semiconducting polymers

The Journal of Chemical Physics, 2000
We present reflectance anisotropy spectroscopy (RAS) data for aligned films of luminescent conjugated polymers. Ultrathin films (5–10 nm) spin-cast onto friction-deposited poly-tetrafluoroethylene (PTFE) show birefringence and dichroism indicating alignment of the polymer chains with the PTFE axis.
E. K. Miller, K. Hingerl, C. J. Brabec, A. J. Heeger, N. S. Sariciftci   +4 more
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Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy

Physical Review B, 2001
Reflectance anisotropy spectroscopy (RAS) was applied to study the reconstructed surfaces of InAs(001) at room temperature. Arsenic-capped InAs samples, grown by molecular beam epitaxy, were annealed in ultrahigh vacuum. Low energy electron diffraction shows that, following As decapping, a $2\ifmmode\times\else\texttimes\fi{}4$ phase (As-rich) is ...
GOLETTI, CLAUDIO, ARCIPRETE, FABRIZIO, Almaviva, S., CHIARADIA, PIETRO, Esser, N., RICHTER, WOLFGANG   +5 more
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Reflectance anisotropy spectroscopy and the growth of low-dimensional materials

Thin Solid Films, 1998
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surface reconstruction and ultrathin coverages of material on semiconductor surfaces. This in situ technique therefore lends itself to monitoring the formation of low-dimensional systems in a wide range of growth environments.
Z Sobiesierski, D.I Westwood
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Model for the effects of surface disorder on reflectance anisotropy spectroscopy

Physical Review B, 2003
We present a simple model for surface disordering and study its consequences on reflectance anisotropy spectroscopy (RAS). Large unit cells are taken as a basis to introduce disorder by means of displacing the atoms from their equilibrium positions. Different displacement schemes are employed and ensemble averages are calculated in order to study the ...
Bernardo S. Mendoza, Norbert Esser, Wolfgang Richter   +2 more
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