Results 241 to 250 of about 14,554 (282)

Reflectance anisotropy spectroscopy study of GaAs overlayer growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of GaAs onto sub to one monolayer coverages of Si δ layers deposited on the GaAs(001)-c(4×4) surface. The low growth temperature (400 °C), required to avoid spreading of the dopant away from the δ plane, has meant that the study of a RAS feature related to ...
Z. Sobiesierski, D. I. Westwood, D. A. Woolf   +2 more
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Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces

SPIE Proceedings, 2006
The optical anisotropy of a semiconductor surface can have different origins, such as, local-field effects, the electro-optics effect, reconstruction, surface dislocations, and surface roughness. A comprehensive, quantitative picture on how these effects are related to surface optical anisotropies (SOA) can now be obtained thanks to the progress in the
R. A. Vázquez-Nava, N. Arzate, B. S. Mendoza   +2 more
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Reflectance anisotropy spectroscopy on the Ge(113) surface

Surface Science, 1996
Abstract The clean and hydrogenated Ge(113) surface was investigated using reflectance anisotropy spectrosopy (RAS). Surface-induced optical transitions related to the 3 × 2 reconstruction of the clean surface were identified. Two of these transitions are quenched when hydrogen adsorption changes the reconstruction.
Scholz, S., Jacobi, K., Zettler, J., Richter, W.   +3 more
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Understanding Growth‐Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy

physica status solidi (b), 2023
Reflectance anisotropy spectroscopy (RAS) has been recently applied to molecular beam epitaxy (MBE) of GaAsBi alloys. The presence of the voluminous Bi atoms induces strain in the crystal lattice, modifying the substrate symmetry of the centrosymmetric GaAs(001) and then producing clear signatures in the anisotropy spectra of the GaAsBi layers.
Beatrice Bonanni, Laura Fazi, Elisa Tisbi, Fabrizio Arciprete, Claudio Goletti   +4 more
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Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces

Journal of Physics: Condensed Matter, 1998
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving the use of electron or ion beams under high- or ultra-high-vacuum conditions. Recently there have been major efforts to develop surface sensitive optical probes that have the inherent advantage that they can be applied in more challenging environments such
Z Sobiesierski, D I Westwood, C C Matthai   +2 more
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The application of reflectance anisotropy spectroscopy to organics deposition

Organic Electronics, 2004
Reflectance anisotropy spectroscopy (RAS) has been recently used to investigate organic compounds, similarly to what has been already done in the case of inorganic semiconductors and metals. An important development is the application of RAS to monitor in real time the growth of thin organic layers in ultra-high vacuum (UHV).
GOLETTI, CLAUDIO, BUSSETTI, GIANLORENZO, CHIARADIA, PIETRO, Sassella, A, Borghesi, A.   +4 more
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Stress-induced optical anisotropy in polycrystalline copper studied by reflection anisotropy spectroscopy

Journal of Physics D: Applied Physics, 2003
The optical properties of polycrystalline copper subjected to tensile stress are monitored in situ and in real time using reflection anisotropy spectroscopy (RAS). It is shown that RAS allows investigation of the plastic regime. Here, in contrast to the Hooke's law regime, the stress-induced RAS lineshape is found to be dependent on the applied stress.
R J Cole, S Kheradmand, D D Higgins, F Madani, B F Macdonald, V Koutsos, J R Blackford   +6 more
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Reflection anisotropy spectroscopy of molecular assembly at metal surfaces

Thin Solid Films, 2004
Abstract Reflection anisotropy spectroscopy (RAS) is a non-destructive optical probe of surfaces capable of operation within ultra-high vacuum and liquid environments. The RAS technique has been used to investigate the behaviour of surface electronic states on clean metal surfaces including energy shifts, depopulation and quantum confinement. RAS has
D.S. Martin, P. Weightman
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Transient Reflective-Polarization Spectroscopy of Hidden Anisotropy in Cubic Crystals

Ultrafast Phenomena, 1994
It is often anticipated that the linear optical properties of GaAs as a cubic material are isotropic. More careful consideration, however shows that spatial dispersion terms in the optical response lead to a small linear birefringence in this crystal. The crystal anisotropy becomes more pronounced in the nonlinear optical response where the symmetry of
N. I. Zheludev, A. R. Bungay, S. V. Popov, Yu. P. Svirko   +3 more
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Analysis of the phase signal in reflection anisotropy spectroscopy

Semiconductor Science and Technology, 1995
In this study the analysis of reflection anisotropy signals reveals that an unusual behaviour of the phase signal may occur in the presence of weakly anisotropic surfaces. It will be shown that the measured lineshape has to be considered with extreme care if a single-phase lock-in amplifier is used in the experimental set-up. It not only depends on the
W Dietrich, M von der Emde, D R T Zahn
openaire   +1 more source